Loading web-font TeX/Main/Regular
There’s More to the Picture Than Meets the Eye, and in the future it will only become more so | IEEE Conference Publication | IEEE Xplore

There’s More to the Picture Than Meets the Eye, and in the future it will only become more so


Abstract:

One of the fastest growing markets in the semiconductor industry is being driven by businesses in the solid-state imaging sector. An overview of the world-wide CIS (CMOS ...Show More

Abstract:

One of the fastest growing markets in the semiconductor industry is being driven by businesses in the solid-state imaging sector. An overview of the world-wide CIS (CMOS Image Sensor) market is illustrated in Figure 1.4.1. The actual CAGR (compound annual growth rate) from 2010 until 2019 was 15.2% in units and 16.9% in sales, while the forecasted CAGR from 2019 until 2024F is 11.5% in units and 7.2% in sales. Existing DRAM fabrication facilities are being converted into CIS manufacturing plants to cope with the increasing demand for CMOS image sensors [1]. Despite a small 4% drop in revenue, and nearly flat unit growth due to the disruptions caused by COVID-19 in 2020, in 2024F the CIS sector expects a record high of 26.1B and 11B units/year [2]. A simple calculation shows that over the course of 2020 (6.3B units, 18.2B), globally 200 image sensors are being produced every second at an average price of $2.9. Realizing this scale of production by the end of 2020 will require a total of 5.4M wafers (300mm diameter), which is equivalent to a silicon area of 76 soccer fields!
Date of Conference: 13-22 February 2021
Date Added to IEEE Xplore: 03 March 2021
ISBN Information:

ISSN Information:

Conference Location: San Francisco, CA, USA
References is not available for this document.

1. Introduction

One of the fastest growing markets in the semiconductor industry is being driven by businesses in the solid-state imaging sector. An overview of the world-wide CIS (CMOS Image Sensor) market is illustrated in Figure 1.4.1. The actual CAGR (compound annual growth rate) from 2010 until 2019 was 15.2% in units and 16.9% in sales, while the forecasted CAGR from 2019 until 2024F is 11.5% in units and 7.2% in sales. Existing DRAM fabrication facilities are being converted into CIS manufacturing plants to cope with the increasing demand for CMOS image sensors [1]. Despite a small 4% drop in revenue, and nearly flat unit growth due to the disruptions caused by COVID-19 in 2020, in 2024F the CIS sector expects a record high of $26.1B and 11B units/year [2]. A simple calculation shows that over the course of 2020 (6.3B units, $18.2B), globally 200 image sensors are being produced every second at an average price of $2.9. Realizing this scale of production by the end of 2020 will require a total of 5.4M wafers (300mm diameter), which is equivalent to a silicon area of 76 soccer fields!

Select All
1.
Samsung Electronics to Expand Foundry Facilities for Image Sensors, May 2020, [online] Available: http://www.businesskorea.co.kr/news/articleView.html?idxno=46495.
2.
CMOS Image Sensors to Resume Record Run in 2021, June 2020, [online] Available: www.icinsights.coms/news/bulletins/CMOS-Image-Sensors-To-Resume-Record_runIn-2021—/.
3.
G. Weckler, "Operation of p-n Junction Photodetectors in a Photon Flux Integrating Mode", IEEE Journal Solid-State Circuits, vol. SC-2, no. 3, pp. 65-70, 1967.
4.
P. J. E. Noble, "Self-Scanned Silicon Image Detector Arrays", IEEE Transactions on Electron Devices, vol. 15, pp. 202-209, 1968.
5.
F. Sangster and K. Teer, "Bucket-Brigade Devices", IEEE Journal Solid-State Circuits, vol. SC-4, pp. 131-136, 1969.
6.
W. S. Boyle and G. E. Smith, "Charge-Coupled Semiconductor Devices", Bell Systems Technical Journal, vol. 49, pp. 587-593, 1970.
7.
W. F. Kosonocky and J. E. Carnes, "Charge Coupled Digital Circuits", IEEE Journal Solid-State Circuits, vol. SC-6, pp. 314-322, 1971.
8.
M. F. Tompsett et al., "Charge-Coupled Imaging Devices: Experimental Results", IEEE Transactions Electron Devices, vol. ED-18, pp. 992-996, 1971.
9.
M. White et al., "Characterization of Surface Channel CCD Image Arrays at Low Light Levels", IEEE Journal Solid-State Circuits, vol. SC-9, no. 1, pp. 1-13, 1974.
10.
N. Teranishi et al., "No Image Lag Photodiode Structure in the Interline CCD Image Sensor", Technical Digest IEDM82, pp. 324-327, December 1982.
11.
Y. Ishihara and K. Tanigaki, "A High Photosensitivity IL-CCD Image Sensor with Monolithic Resin Lens Array", Technical Digest IEDM83, pp. 497-500, December 1983.
12.
A. Theuwissen, Solid-State Imaging with Charge-Coupled Devices, Kluwer Academic Publishers, pp. 317-348, 1995.
13.
E. R. Fossum, "Active Pixel Sensors: Are CCD’s Dinosaurs?", Proc. of the SPIE “Charge-Coupled Device and Solid-State Optical Sensors III, vol. 1900, pp. 2-13, 1993.
14.
D. Renshaw et al., "ASIC VISION", Custom Integrated Circuits Conference, pp. 7.3.1-7.3.4, May 13-16, 1990.
15.
K. Chen et al., "PASIC: A Processor-A/D Converter-Sensor Integrated Circuit", International Symposium on Circuits and Systems, pp. 1705-1708, May 1-3, 1990.
16.
E. R. Fossum, "CMOS Image Sensors: Electronic Camera on a Chip", Technical Digest IEDM95, pp. 17-25, December 1995.
17.
E. R. Fossum, "What To Do with Sub-Diffraction-Limit (SDL) Pixels? – A Proposal for a Gigapixel Digital Film Sensor (DFS)", International Image Sensor Workshop, pp. 214-217, June 9-11, 2005.
18.
M. Guidash et al., "An Active Pixel Sensor Fabricated Using CMOS/CCD Process Technology", IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors, pp. 115-119, April 20-22, 1995.
19.
"International Roadmap for Devices and Systems 2020 Edition Executive Summary", Table ES2, pp. 36, [online] Available: www.irds.ieee.org/editions/2020.
20.
S. Lee et al., "A 5.2Mpixel 88.4 dB 12inch CMOS X-Ray Detector with 16b Column-Parallel Continuous-Time ΣΔ ADCs", Digest of Technical Papers International Solid-State Circuits Conference, pp. 434-435, February 16-2-, 2020.
21.
A. Theuwissen et al., "Versatile Building-Block Architecture for Large Area High Performance CCD Imagers", Proceedings of SPIE, vol. 3301, pp. 37-43, Jan. 26-27, 1998.
22.
E. R. Fossum, "Charge-Coupled Analog Computer Elements and Their Application to Smart Image Sensors", PhD thesis Yale University, pp. 10, May 1964.
23.
K. Kioi et al., "Monolithic Character Recognition System Implemented as Proto-Type Intelligent Image Sensor by 3D Integration Technology", Technical Digest IEDM90, pp. 66-69, December 1990.
24.
G. Agranov et al., "Crosstalk and Microlens Study in a Color CMOS Image Sensor", IEEE Transactions on Electron Devices, vol. 50, pp. 4-11, Jan. 2003.
25.
H. Watanabe, "A 1.4 μm Front-Side Illuminated Image Sensor with Novel Light Guiding Structure Consisting of Stacked Lightpipes", Technical Digest IEDM11 Washington (DC), pp. 8.3.1-8.3.4, December 2011.
26.
T. Okawa et al., "A 1/2inch 48M All PDAF CMOS Image Sensor Using 0.8 μm Quad Bayer Coding 2x2OCL with 1.0lux Minimum AF Illuminance Level", Technical Digest IEDM19 San Francisco (CA), pp. 16.3.1-16.3.4, December 2019.
27.
M. Kobayashi et al., "A Low Noise and High Sensitivity Image Sensor with Imaging and Phase-Difference Detection AF in All Pixels", International Image Sensor Workshop Vaals (Netherlands), June 8-11, 2015.
28.
K. De Munck et al., "High Performance Hybrid and Monolithic Backside Thinned CMOS Imagers Realized Using a New Integration Process", Technical Digest IEDM06, Dec. 2006.
29.
R. Fontaine, private e-mail communication, June 2020.
30.
J. C. Ahn et al., "A ¼-inch 8Mpixel CMOS Image Sensor with 3D Back-Side-Illuminated 1.12 μm Pixel with Front-Side Deep Trench Isolation and Vertical Transfer Gate", Digest of Technical Papers International Solid-State Circuits Conference, pp. 124-125, Feb. 9-13, 2014.

Contact IEEE to Subscribe

References

References is not available for this document.