I. Introduction
Terahertz (THz)-integrated circuits based on CMOS and SiGe BiCMOS technologies show the potential to replace the traditional quantum cascade lasers-based THz spectroscopy as a valuable laboratory tool to offer the extraction of dispersive transmission and reflection properties of different materials due to its high integration level and reliability without requiring the cooling system in [1]. They are able to have an integration of all THz functions, which include THz signal generation, sensing element/transducer and power receiving/detection. Although there is obvious advantage of integration by a combination of the excitation and sensing function using a voltage-controlled oscillator-based architecture with a capacitive sensing structure in [2], it still require further investigations of an integration of transducer with RF receiver-based architecture to sense and capture a single-tone excitation signal.