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480-GHz Sensor With Subharmonic Mixer and Integrated Transducer in a 130-nm SiGe BiCMOS Technology | IEEE Journals & Magazine | IEEE Xplore

480-GHz Sensor With Subharmonic Mixer and Integrated Transducer in a 130-nm SiGe BiCMOS Technology


Abstract:

A 480-GHz sensor consists of signal stimulus and the transducer element as well as a subharmonic mixer in a 130-nm SiGe BiCMOS technology is reported. It features a mixer...Show More

Abstract:

A 480-GHz sensor consists of signal stimulus and the transducer element as well as a subharmonic mixer in a 130-nm SiGe BiCMOS technology is reported. It features a mixer-first architecture based on down-conversion subharmonic mixer, an local oscillator (LO) chain at 240-GHz using a frequency doubler with variable-gain characterization, and a 480-GHz RF chain, making the fully integrated 480-GHz receiver possible. In a frequency range of 210–270 GHz at a maximum of 1.5-V supply offset, the LO chain has a 14-dB power-level variation, comprising with a 120-GHz frequency quadrupler, a power amplifier, and a variable frequency doubler. The proposed subharmonic receiver is driven by the RF and LO chain with a multiplier factor of 16 and 8, respectively. In this way, 480-GHz signal is generated, fed through the transducer, and hetero-mixed at subharmonic mixer. The measured output power difference is adjustable over 8 dB. Along with the intermediate frequency (IF) bandwidth of 20 GHz, the wide RF bandwidth makes it suitable for submillimetre-wave receiver-based dielectric spectroscopy applications. The chip occupies an area of 2.2 mm2 and consumes 290 mW.
Published in: IEEE Microwave and Wireless Components Letters ( Volume: 30, Issue: 9, September 2020)
Page(s): 908 - 911
Date of Publication: 12 August 2020

ISSN Information:

Funding Agency:

Fraunhofer IPMS, Dresden, Germany
Innovations for High Performance Microelectronics (IHP), Frankfurt (Oder), Germany
Innovations for High Performance Microelectronics (IHP), Frankfurt (Oder), Germany
Fraunhofer IPMS, Dresden, Germany
Institute of Electronic Devices and Circuits, Ulm University, Ulm, Germany

I. Introduction

Terahertz (THz)-integrated circuits based on CMOS and SiGe BiCMOS technologies show the potential to replace the traditional quantum cascade lasers-based THz spectroscopy as a valuable laboratory tool to offer the extraction of dispersive transmission and reflection properties of different materials due to its high integration level and reliability without requiring the cooling system in [1]. They are able to have an integration of all THz functions, which include THz signal generation, sensing element/transducer and power receiving/detection. Although there is obvious advantage of integration by a combination of the excitation and sensing function using a voltage-controlled oscillator-based architecture with a capacitive sensing structure in [2], it still require further investigations of an integration of transducer with RF receiver-based architecture to sense and capture a single-tone excitation signal.

Fraunhofer IPMS, Dresden, Germany
Innovations for High Performance Microelectronics (IHP), Frankfurt (Oder), Germany
Innovations for High Performance Microelectronics (IHP), Frankfurt (Oder), Germany
Fraunhofer IPMS, Dresden, Germany
Institute of Electronic Devices and Circuits, Ulm University, Ulm, Germany
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