Abstract:
The frequency response of InGaAs/InAlAs multiple-quantum-well (MQW) optical modulators and their dependence on incident light power are described. No decrease in small-si...Show MoreMetadata
Abstract:
The frequency response of InGaAs/InAlAs multiple-quantum-well (MQW) optical modulators and their dependence on incident light power are described. No decrease in small-signal modulation bandwidth was observed up to ten times the initial value of 1 mW. The mechanism of the frequency-response difference between InGaAs/InAlAs MQW modulators and InGaAs/InP modulators is discussed.<>
Published in: IEEE Photonics Technology Letters ( Volume: 1, Issue: 1, January 1989)
DOI: 10.1109/68.87882
Citations are not available for this document.
Cites in Papers - |
Cites in Papers - IEEE (2)
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1.
T. Ido, H. Sano, S. Tanaka, D.J. Moss, H. Inoue, "Performance of strained InGaAs/InAlAs multiple-quantum-well electroabsorption modulators", Journal of Lightwave Technology, vol.14, no.10, pp.2324-2331, 1996.
2.
I. Kotaka, K. Wakita, O. Mitomi, H. Asai, Y. Kawamura, "High-speed InGaAlAs/InAlAs multiple quantum well optical modulators with bandwidths in excess of 20 GHz at 1.55 mu m", IEEE Photonics Technology Letters, vol.1, no.5, pp.100-101, 1989.
Cites in Papers - Other Publishers (1)
1.
P.C. Becker, N.A. Olsson, J.R. Simpson, Erbium-Doped Fiber Amplifiers, pp.321, 1999.
