Modeling of Photocurrent Response for Integrated Optoelectric Circuit Simulation

The photodiode model HiSIM-PD has been developed for circuit integration by considering the dynamic carrier generation mechanism explicitly. To predict transient photocurrent characteristics accurately for any device structure as well as any bias condition different electric field distributions in the device causing different carrier transit dynamics are distinguished. It is verified that the extended HiSIM-PD is applicable for integrated circuit simulation predicting generated current response accurately for any operating conditions and device structures.

I. Introduction

Advanced photodiode developments for high-speed applications are approaching the millimeter wave detection according to the optical fiber expansion [1]. On the other hand, camera on chip has been on a mass production phase, which requires precise photo detection [2, 3]. To achieve high integration density of optoelectric circuits with a minimum photon flux and reduced applied voltages for such as the artificial-eye application, accurate prediction of the photocurrent response is prerequisite [4].