Abstract:
We study the quantum dissipative transport in Phosphorene n-type metal oxide semiconductor field effect transistor (MOSFET) in armchair and zigzag directions. The transpo...Show MoreMetadata
Abstract:
We study the quantum dissipative transport in Phosphorene n-type metal oxide semiconductor field effect transistor (MOSFET) in armchair and zigzag directions. The transport equations are solved quantum mechanically under the nonequilibrium Green's function (NEGF) formalism and relies on a single-band effective mass Hamiltonian. The treatment of electron phonon scattering is done under the self consistent Born approximation (SCBA). We investigate in detail the effect of different acoustic and optical phonon modes on the drain current of the device for different channel lengths. We show that optical phonon mode with a deformation potential constant of 8.07x10^8 eV/cm and energy 0.0421 eV plays the most important role in electron phonon scattering and subsequent degradation of ON current in devices along both directions. We also find that effect of electron phonon scattering is more pronounced along zigzag direction.
Published in: 2019 32nd International Conference on VLSI Design and 2019 18th International Conference on Embedded Systems (VLSID)
Date of Conference: 05-09 January 2019
Date Added to IEEE Xplore: 13 May 2019
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Dept. of Electronic Systems Engineering, Indian Institute of Science, Bangalore, India
Dept. of Electronic Systems Engineering, Indian Institute of Science, Bangalore, India
Dept. of Electronic Systems Engineering, Indian Institute of Science, Bangalore, India
Contents Dept. of Electronic Systems Engineering, Indian Institute of Science, Bangalore, India
Dept. of Electronic Systems Engineering, Indian Institute of Science, Bangalore, India
Dept. of Electronic Systems Engineering, Indian Institute of Science, Bangalore, India
