Abstract:
A circuit simulation model suitable for modeling the static and dynamic switching characteristics of high-frequency power MOSFETs is reported. The model parameters were o...Show MoreMetadata
Abstract:
A circuit simulation model suitable for modeling the static and dynamic switching characteristics of high-frequency power MOSFETs is reported. The model parameters were obtained from physical device layout, silicon doping, and measured electrical characteristics of power MOSFETs. Accurate voltage dependencies of the interelectrode capacitances were obtained from extensive two-dimensional device simulations. The voltage dependence of gate-drain capacitance was modeled using an analytic expression. The measured static current-voltage and transient-switching responses under resistive switching conditions are in excellent agreement with simulation results obtained from SPICE. The MOSFET subcircuit model was used to accurately predict the performance of a series-parallel resonant DC-DC converter using a multilevel system simulator.<>
Published in: IEEE Transactions on Power Electronics ( Volume: 6, Issue: 3, July 1991)
DOI: 10.1109/63.85888
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1.
Β. J. Baliga, "Revolutionary innovations in power diserete devices", IEDM Technical Digest, pp. 102-105, 1986.
2.
K. Shenai, C. S. Korman and B. J. Baliga, Optimum silicon and GaAs power field-effect transistors for advanced high-density high-frequcncy power supply applications, pp. 32-61, May 1989.
3.
A. F. Goldberg and J. G. Kassakian, "The application of power MOSFET's at 10 MHz", IEEE Power Electronics Specialists Conf. Rec., pp. 91-100, 1985.
4.
K. Shenai, C. S. Korman, J. P. Walden, A. J. Yerman and B. J. Baliga, "Optimized silicon low-voltage power MOSFET's for high-frequency power conversion", IEEE Power Electronics Specialists Conf. Rec., vol. 1, pp. 180-189, 1989-Jun.
5.
H. C. Lin, Y. F. Arzoumanian, J. L. Halsor, M. N. Giuliano and H. F. Benz, "Effect of silicon-gate resistance on the frequency response of MOS transistors", IEEE Trans. Electron Devices, vol. ED-22, pp. 255-264, 1975.
6.
G. M. Dolny, C. F. Wheatly and H. R. Ronan, "Computer-aided analysis of gate-voltage propagation effects in power MOS-FETs", Technical Papers of the First International High Frequency Power Conversion, pp. 149-154, 1986.
7.
K. Shenai, C. S. Korman, B. J. Baliga and P. A. Piacente, "A 50-V 0.7 mΩ-cm2 vertical-power DMOSFET", IEEE Electron Device Letters, vol. EDL-10, pp. 101-103, 1989.
8.
K. Shenai, P. A. Piacente, C. S. Korman and B. J. Baliga, "High performance vertical power DMOSFET's with selectively silicided gate and source regions", IEEE Electron Device Letters, vol. 10, no. 4, pp. 153-155, Apr. 1989.
9.
K. Shenai, P. A. Piacente, R. Saia and B. J. Baliga, "Blanket LPCVD tungsten silicide technology for smart power applications", IEEE Electron Device Letters, vol. 10, no. 6, pp. 270-273, June 1989.
10.
K. Shenai, P. A. Piacente, R. Saia, C. S. Korman and B. J. Baliga, "Selectively silicided vertical power DMOSFETs for high-frequency power conversion", Electronics Lett., vol. 25, no. 12, pp. 784-785, June 1989.
11.
K. Shenai, P. A. Piacente, R. Saia, W. Hennessy, C. S. Korman and B. J. Baliga, "A novel high-frequency power FHT structure fabricated using LPCVD WSi2 gate and LPCVD tungsten source contact technology", IEDM Technical Digest, pp. 804-808, 1988.
12.
M. R. Pinto, C. S. Rafferty, H. R. Yeager and R. W. Dutton, PISCES-IIB: Supplementary Report, 1985.
13.
R. Blanchard and P. E. Thibodeau, "The design of the high-efficiency low-voltage power supply using MOSFET synchronous rectification and current mode control", IEEE Power Electronics Specialists Conf. Rec., pp. 355, 1985.
14.
C. S. Korman, K. Ngo, A. Yerman, G. Claydon, J. Walden, Κ. Shenai, et al., "A synchronous rectifier for high-density power supplies", Conf. Rec. Technical Papers of the Third International High Frequency Power Conversion, 1988.
15.
C. P. Ho, J. D. Plummer, S. E. Hansen and R. W. Dutton, "VLSI process modeling - SUPREM III", IEEE Trans. Electron Devices, vol. ED-30, pp. 1438-1452, 1983.
16.
K. Shenai, "Effect of gate resistance on the high-frequency switching efficiencies of advanced power MOSFET's", IEEE J. Solid State Circuits, Apr. 1990.
17.
W. E. Burns and J. Kociecki, "Power electronics in the mini-computer industry", Proc. IEEE, vol. 76, pp. 311-324, Apr. 1988.
