Abstract:
A circuit simulation model suitable for modeling the static and dynamic switching characteristics of high-frequency power MOSFETs is reported. The model parameters were o...Show MoreMetadata
Abstract:
A circuit simulation model suitable for modeling the static and dynamic switching characteristics of high-frequency power MOSFETs is reported. The model parameters were obtained from physical device layout, silicon doping, and measured electrical characteristics of power MOSFETs. Accurate voltage dependencies of the interelectrode capacitances were obtained from extensive two-dimensional device simulations. The voltage dependence of gate-drain capacitance was modeled using an analytic expression. The measured static current-voltage and transient-switching responses under resistive switching conditions are in excellent agreement with simulation results obtained from SPICE. The MOSFET subcircuit model was used to accurately predict the performance of a series-parallel resonant DC-DC converter using a multilevel system simulator.<>
Published in: IEEE Transactions on Power Electronics ( Volume: 6, Issue: 3, July 1991)
DOI: 10.1109/63.85888
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- IEEE Keywords
- Index Terms
- Circuit Simulation ,
- High Frequency Power ,
- Power MOSFETs ,
- Circuit Simulation Model ,
- Model Parameters ,
- Impedance ,
- Silicon ,
- Excellent Agreement ,
- Converter Operation ,
- Static Characteristics ,
- Device Simulation ,
- Two-dimensional Simulations ,
- Physical Layout ,
- Resonant Converter ,
- Scanning Electron Microscopy ,
- Process Parameters ,
- Power Loss ,
- I-V Curves ,
- Conduction Loss ,
- Effective Channel ,
- Semiconductor Devices ,
- Doping Profile ,
- Device Parameters ,
- Total Power Loss ,
- Input Capacitance ,
- Semiconductor Process ,
- polySia ,
- Switching Loss ,
- Parasitic Inductance ,
- Silicide
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Circuit Simulation ,
- High Frequency Power ,
- Power MOSFETs ,
- Circuit Simulation Model ,
- Model Parameters ,
- Impedance ,
- Silicon ,
- Excellent Agreement ,
- Converter Operation ,
- Static Characteristics ,
- Device Simulation ,
- Two-dimensional Simulations ,
- Physical Layout ,
- Resonant Converter ,
- Scanning Electron Microscopy ,
- Process Parameters ,
- Power Loss ,
- I-V Curves ,
- Conduction Loss ,
- Effective Channel ,
- Semiconductor Devices ,
- Doping Profile ,
- Device Parameters ,
- Total Power Loss ,
- Input Capacitance ,
- Semiconductor Process ,
- polySia ,
- Switching Loss ,
- Parasitic Inductance ,
- Silicide
