Abstract:
The effects of remote charge scattering on the electron mobility of n-MOSFETs with ultrathin gate oxides from 1.5 nm to 3.2 nm have been estimated. By calculating the sca...Show MoreMetadata
Abstract:
The effects of remote charge scattering on the electron mobility of n-MOSFETs with ultrathin gate oxides from 1.5 nm to 3.2 nm have been estimated. By calculating the scattering rate of the two-dimensional (2-D) electron gas at the Si/silicon dioxide interface due to the ionized doping impurities at the poly-Si/silicon dioxide interface, the remote charge scattering mobility has been calculated. Electron mobility measured from the n-MOSFETs with ultrathin gate oxides has been used to extract several known mobility components. These mobility components have been compared to the calculated remote charge scattering mobility. From these comparisons, it is clear that the overall electron mobility is not severely degraded by remote charge scattering for the oxide thickness studied.
Published in: IEEE Transactions on Electron Devices ( Volume: 47, Issue: 2, February 2000)
DOI: 10.1109/16.822292
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- IEEE Keywords
- Index Terms
- High Field ,
- Density Of States ,
- Carrier Mobility ,
- Metal Oxide Semiconductor ,
- Si Substrate ,
- Depletion Region ,
- Doping Level ,
- Effect Of Electric Field ,
- Oxide Thickness ,
- Electron Effective Mass ,
- Gate Oxide ,
- Two-dimensional Electron ,
- Mobile Components ,
- Inversion Layer ,
- Physical Thickness ,
- Average Layer Thickness ,
- Quantum Mechanical Effects ,
- Impurity Doping ,
- Mobility Degradation ,
- North Carolina State University ,
- Interface Roughness ,
- Gate Dielectric ,
- Quantity Of Interest ,
- Function Of Electric Field ,
- Voltage Drop ,
- Low-temperature Oxidation ,
- Gate Electrode ,
- Energy Levels ,
- Effective Mobility
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- High Field ,
- Density Of States ,
- Carrier Mobility ,
- Metal Oxide Semiconductor ,
- Si Substrate ,
- Depletion Region ,
- Doping Level ,
- Effect Of Electric Field ,
- Oxide Thickness ,
- Electron Effective Mass ,
- Gate Oxide ,
- Two-dimensional Electron ,
- Mobile Components ,
- Inversion Layer ,
- Physical Thickness ,
- Average Layer Thickness ,
- Quantum Mechanical Effects ,
- Impurity Doping ,
- Mobility Degradation ,
- North Carolina State University ,
- Interface Roughness ,
- Gate Dielectric ,
- Quantity Of Interest ,
- Function Of Electric Field ,
- Voltage Drop ,
- Low-temperature Oxidation ,
- Gate Electrode ,
- Energy Levels ,
- Effective Mobility
