Abstract:
The effects of remote charge scattering on the electron mobility of n-MOSFETs with ultrathin gate oxides from 1.5 nm to 3.2 nm have been estimated. By calculating the sca...Show MoreMetadata
Abstract:
The effects of remote charge scattering on the electron mobility of n-MOSFETs with ultrathin gate oxides from 1.5 nm to 3.2 nm have been estimated. By calculating the scattering rate of the two-dimensional (2-D) electron gas at the Si/silicon dioxide interface due to the ionized doping impurities at the poly-Si/silicon dioxide interface, the remote charge scattering mobility has been calculated. Electron mobility measured from the n-MOSFETs with ultrathin gate oxides has been used to extract several known mobility components. These mobility components have been compared to the calculated remote charge scattering mobility. From these comparisons, it is clear that the overall electron mobility is not severely degraded by remote charge scattering for the oxide thickness studied.
Published in: IEEE Transactions on Electron Devices ( Volume: 47, Issue: 2, February 2000)
DOI: 10.1109/16.822292
Citations are not available for this document.
Cites in Patents (1)Patent Links Provided by 1790 Analytics
1.
Kim, Hyeon-Seag; Jeon, Joong, "MOS TRANSISTORS WITH HIGH K DIELECTRIC GATE INSULATOR FOR REDUCING REMOTE SCATTERING"
Inventors:
Kim, Hyeon-Seag; Jeon, Joong
Abstract:
The present invention relates to a MOS transistor structure and method of manufacture which provides a high-k dielectric gate insulator for reduced gate current leakage while concurrently reducing remote scattering, thereby improving transistor carrier mobility.
Assignee:
ADVANCED MICRO DEVICES INC
Filing Date:
20 May 2002
Grant Date:
16 September 2003
Patent Classes:
Current U.S. Class:
257310000, 257E29154, 257E29158, 438290000, 977881000
Current International Class:
H01L0271080000
