A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration | IEEE Journals & Magazine | IEEE Xplore

A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration


Abstract:

A novel high-voltage single-emitter horizontal current bipolar transistor (HCBT) is presented. Breakdown voltage improvement compared to high-speed transistor is obtained...Show More

Abstract:

A novel high-voltage single-emitter horizontal current bipolar transistor (HCBT) is presented. Breakdown voltage improvement compared to high-speed transistor is obtained with full depletion of the intrinsic collector by using implanted CMOS p-well region. Transistors with BVCEO = 10.5 V and fT = 15.8 GHz are demonstrated. Higher operating currents can be easily obtained by stretching the emitter length resulting in a flexible physical design of circuits. The transistor is fabricated in 0.18-μm HCBT BiCMOS process flow without the additional process steps and the use of additional lithography masks.
Published in: IEEE Transactions on Electron Devices ( Volume: 64, Issue: 7, July 2017)
Page(s): 3019 - 3022
Date of Publication: 23 May 2017

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I. Introduction

Bipolar transistors which have a fully depleted intrinsic collector can be used as high-voltage (HV) devices since they have increased values of breakdown voltages [1]–[7]. Furthermore, a base width modulation in such structures is suppressed allowing for aggressive scaling of the base layer, which results in a great tradeoff between common-emitter current gain ( and early voltage (, offering a good analog performance. A high-frequency performance is degraded, but devices working at the Jonhson’s limit are demonstrated [6].

Cites in Papers - |

Cites in Papers - IEEE (5)

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1.
Marko Koričić, Dorian Emanović, Filip Bogdanović, Marin Furčić, Fran Jakovac, Tomislav Suligoj, Monika Jurenić, Josip Žilak, "Investigation of the Electrical Performance of Voltage-Controlled-Oscillators in HCBT BiCMOS Technology", 2022 International Conference on Smart Systems and Technologies (SST), pp.275-280, 2022.
2.
Josip Žilak, Željko Osrečki, Marko Koričić, Filip Bogdanović, Tomislav Suligoj, "Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits", 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), pp.1-4, 2021.
3.
F. Bogdanović, Ž. Osrečki, J. Žilak, M. Koričić, T. Suligoj, "Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application", 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), pp.22-27, 2021.
4.
Tomislav Suligoj, Josip Žilak, Željko Osrečki, Marko Koričić, "Versatile BiCMOS Technology Platform for the Low-cost Integration of Multi-purpose Applications", 2021 IEEE Latin America Electron Devices Conference (LAEDC), pp.1-4, 2021.
5.
Marko Koričić, Josip Žilak, Željko Osrečki, Tomislav Suligoj, "Analysis of tunable BVCEO in horizontal current bipolar transistor with floating field plates", 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), pp.0066-0071, 2018.

References

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