I. Introduction
Scalability, high endurance, and fast switching speeds have solidified Hafnia-based resistive random access memory (RRAM) as a serious candidate for future nonvolatile memory [1]–[3]. Demonstrations of precise resistance state control [4], [5] further extended the application space to include multilevel cells and neuromorphic computing. However, for higher resistance filaments (more desirable for low power operation), observations of large resistance fluctuations threaten RRAM viability as the resistance states are less distinguishable [6], [7]. Mitigation efforts have focused on understanding the origin and impact of these fluctuations [8]–[11]. Unfortunately, most studies focus on the long-term fluctuations that impact retention, not on the much faster fluctuations that impact fast read/write operation. Recently, the resistance distribution was tracked from to 1s after programming and was shown to degrade drastically over that period [12]. This degradation was attributed to two factors – fluctuation amplitude decay over time and stochastic (mean value) relaxation.