Abstract:
In developing position sensitive radiation sensors, e.g. for medical imaging, low-gain silicon well sensors were made for the detection of scintillation light. The 3/spl ...Show MoreMetadata
Abstract:
In developing position sensitive radiation sensors, e.g. for medical imaging, low-gain silicon well sensors were made for the detection of scintillation light. The 3/spl times/3 arrays include N/sup ++/NP diodes, processed in the /spl sim/12 /spl mu/m thick membranes that remain after thinning of 530 /spl mu/m thick [100] silicon wafers by means of a potassium hydroxide (KOH) solution. A comparison is made for the light detection efficiency of these diodes with that of a 500 /spl mu/m thick PIN photodiode.
Date of Conference: 08-14 November 1998
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-5021-9
Print ISSN: 1082-3654
Radiation Technology Group, Interfaculty Reactor Institute, Delft University of Technnology, Delft, Netherlands
Radiation Technology Group, Interfaculty Reactor Institute, Delft University of Technnology, Delft, Netherlands
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technnology, Netherlands
Radiation Technology Group, Interfaculty Reactor Institute, Delft University of Technnology, Delft, Netherlands
Radiation Technology Group, Interfaculty Reactor Institute, Delft University of Technnology, Delft, Netherlands
Radiation Technology Group, Interfaculty Reactor Institute, Delft University of Technnology, Delft, Netherlands
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technnology, Netherlands
Radiation Technology Group, Interfaculty Reactor Institute, Delft University of Technnology, Delft, Netherlands
