Abstract:
Data are presented on the temperature dependence of 1.3-μm wavelength quantum-dot (QD) lasers. A low-threshold current density of 90 A/cm2 is achieved at room temperature...Show MoreMetadata
Abstract:
Data are presented on the temperature dependence of 1.3-μm wavelength quantum-dot (QD) lasers. A low-threshold current density of 90 A/cm2 is achieved at room temperature using high reflectivity coatings. Despite the low-threshold current density, lasing at the higher temperatures is limited by nonradiative recombination with a rapid increase in threshold current occurring above /spl sim/225 K. Our results suggest that very low threshold current density (/spl les/20 A/cm2) can be achieved at room temperature from 1.3-μm QD lasers, once nonradiative recombination is eliminated."
Published in: IEEE Photonics Technology Letters ( Volume: 11, Issue: 3, March 1999)
DOI: 10.1109/68.748215
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA
University of Texas at Austin, Austin, TX, US
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA
University of Texas at Austin, Austin, TX, US
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA
