Abstract:
This investigation aims at developing a compact model for the embedded diode in Super-Junction MOSFETs applicable for more than 500V bias conditions. It is demonstrated t...Show MoreMetadata
Abstract:
This investigation aims at developing a compact model for the embedded diode in Super-Junction MOSFETs applicable for more than 500V bias conditions. It is demonstrated that the reverse-recovery effect is different from the conventional stand-alone pin diode. The reason is the extension of the depletion at the additional p/n junction in the Super-Junction MOSFET under reverse bias applications. The depletion region prevents the current flow and thus forcing the rapid charge dissipation from the device. We have developed an embedded diode model on the basis of HiSIM-Diode originally developed for the conventional pin diode.
Published in: 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Date of Conference: 01-04 June 2015
Date Added to IEEE Xplore: 01 October 2015
ISBN Information:
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