Abstract:
Optimization of InGaAs/InAlAs multiple quantum well modulator structures, as well as polarization insensitivity and low chirp was investigated as a function of well thick...Show MoreMetadata
Abstract:
Optimization of InGaAs/InAlAs multiple quantum well modulator structures, as well as polarization insensitivity and low chirp was investigated as a function of well thickness and strain magnitude and very short optical pulses with 4-6 ps was obtained using a low driving-voltage (2.0 V/sub pp/) electroabsorption modulator module operating at a 40-GHz large signal modulation.
Published in: Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)
Date of Conference: 11-15 May 1998
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-4220-8
Print ISSN: 1092-8669
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