Abstract:
Strained InGaAs/InAlAs multi-quantum well (MQW) layers are grown by a low pressure MOVPE. Introduction of compressive strain into an InAlAs barrier layer against a tensil...Show MoreMetadata
Abstract:
Strained InGaAs/InAlAs multi-quantum well (MQW) layers are grown by a low pressure MOVPE. Introduction of compressive strain into an InAlAs barrier layer against a tensile strained well layer makes it possible to grow an MQW layer with good quality. By using these layers, we have also demonstrated strained InGaAs/InAlAs MQW electroabsorption modulators with a polarization insensitivity.
Date of Conference: 09-13 May 1995
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-2147-2
