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400-Gb/s operation of flip-chip interconnection EADFB laser array module | IEEE Conference Publication | IEEE Xplore

400-Gb/s operation of flip-chip interconnection EADFB laser array module


Abstract:

The flip-chip interconnection 8-channel EADFB laser array module is developed. The flip-chip interconnection technique provides low crosstalk. After 10-km transmission, c...Show More

Abstract:

The flip-chip interconnection 8-channel EADFB laser array module is developed. The flip-chip interconnection technique provides low crosstalk. After 10-km transmission, clear eye opening is obtained for all eight lanes under 8 × 50-Gb/s simultaneous operation.
Date of Conference: 22-26 March 2015
Date Added to IEEE Xplore: 15 June 2015
Electronic ISBN:978-1-5575-2937-4
Conference Location: Los Angeles, CA, USA

1. Introduction

The exponential growth of wireless applications and cloud service has created a pressing need to handle enormous amounts of data traffic for datacom and telecom services. The Ethernet data rate is increasing rapidly to cope with this demand. The 100-gigabit Ethernet (100GbE) was standardized in 2010 [1]. For single-mode fiber (SMF) applications, it employs a multi-lane interface with a data rate of . The four lanes are allocated on an 800-GHz spacing LAN-WDM grid at .

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References

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