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A unified MOSFET channel charge model for device modeling in circuit simulation | IEEE Journals & Magazine | IEEE Xplore

A unified MOSFET channel charge model for device modeling in circuit simulation


Abstract:

In this paper, we present a simple and accurate MOSFET channel charge model for device modeling in circuit simulation. The model can guarantee good continuities and smoot...Show More

Abstract:

In this paper, we present a simple and accurate MOSFET channel charge model for device modeling in circuit simulation. The model can guarantee good continuities and smooth transitions of charge, capacitance, current, and transconductance from subthreshold to strong inversion with a unified analytical expression, and agrees with the experimental data well at various process and bias conditions from subthreshold and strong inversion, including the moderate inversion region of growing importance for low-voltage/power circuits.
Page(s): 641 - 644
Date of Publication: 31 August 1998

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