Abstract:
In this paper, we present a simple and accurate MOSFET channel charge model for device modeling in circuit simulation. The model can guarantee good continuities and smoot...Show MoreMetadata
Abstract:
In this paper, we present a simple and accurate MOSFET channel charge model for device modeling in circuit simulation. The model can guarantee good continuities and smooth transitions of charge, capacitance, current, and transconductance from subthreshold to strong inversion with a unified analytical expression, and agrees with the experimental data well at various process and bias conditions from subthreshold and strong inversion, including the moderate inversion region of growing importance for low-voltage/power circuits.
Published in: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ( Volume: 17, Issue: 8, August 1998)
DOI: 10.1109/43.712096
Rockwell Semiconductor Systems, Inc., Newport Beach, CA, USA
Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, CA, USA
Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, CA, USA
ULSI Device Development Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan
Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, CA, USA
Rockwell Semiconductor Systems, Inc., Newport Beach, CA, USA
Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, CA, USA
Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, CA, USA
ULSI Device Development Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan
Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, CA, USA
