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A 110GHz GaAs MHEMT LNA MMIC | IEEE Conference Publication | IEEE Xplore

A 110GHz GaAs MHEMT LNA MMIC


Abstract:

This paper presents the development of 110GHz monolithic low-noise amplifier (LNA) using 100 nm In0.52Al0.48As/In0.53Ga0.47As GaAs metamorphic high electron mobility tran...Show More

Abstract:

This paper presents the development of 110GHz monolithic low-noise amplifier (LNA) using 100 nm In0.52Al0.48As/In0.53Ga0.47As GaAs metamorphic high electron mobility transistors (MHEMTs) technology. The MHEMT technology features an extrinsic fT of 220GHz and an extrinsic transconduction gm,max of 940mS/mm. The LNA is consisted by 4 stages 2×20um gate width transistors. The amplifier demonstrates a gain of 17.7dB at 110GHz with a noise figure of 4.3dB when biased for high gain, and a noise figure of 3.6dB is achieved with an associated gain of 16.6dB at 110GHz when biased for low-noise figure. The chip area is 2.7mm×1.4mm.
Date of Conference: 05-07 December 2014
Date Added to IEEE Xplore: 19 March 2015
ISBN Information:
Conference Location: Beijing, China

I. Introduction

In the millimeter-wave communication, the LNA is one of the key components in the millimeter-wave imaging and remote sensing technology. During development of the space exploration, the needs for the operation range have crossed over the 100GHz, it plays an important role in aircraft landing, atmospheric analysis etc[1].

References

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