This paper presents the development of 110GHz monolithic low-noise amplifier (LNA) using 100 nm In0.52Al0.48As/In0.53Ga0.47As GaAs metamorphic high electron mobility transistors (MHEMTs) technology. The MHEMT technology features an extrinsic fT of 220GHz and an extrinsic transconduction gm,max of 940mS/mm. The LNA is consisted by 4 stages 2×20um gate width transistors. The amplifier demonstrates a...Show More