8 x 50-Gb/s simultaneous operation of EADFB laser array using flip-chip interconnection technique | IEEE Conference Publication | IEEE Xplore

8 x 50-Gb/s simultaneous operation of EADFB laser array using flip-chip interconnection technique


Abstract:

We fabricated an eight-channel EADFB laser array sub-assembly using a flip-chip interconnection technique that provided a low crosstalk. We achieved clear eye openings fo...Show More

Abstract:

We fabricated an eight-channel EADFB laser array sub-assembly using a flip-chip interconnection technique that provided a low crosstalk. We achieved clear eye openings for all eight lanes with 8 × 50-Gb/s simultaneous operation.
Date of Conference: 07-10 September 2014
Date Added to IEEE Xplore: 18 December 2014
Electronic ISBN:978-1-4799-5722-4

ISSN Information:

Conference Location: Palma de Mallorca, Spain
Citations are not available for this document.

1. Introduction

The recent rapid growth of data communication services such as cloud computing has triggered the need for large data capacity for inter-data-center optical networks. To cope with this requirement, a 400-Gb/s Ethernet (400GbE) [1] system is expected to be developed as a next-generation inter-data-center optical network. If a conventional nonreturn-to-zero on-off keying (NRZ-OOK) system is used, a range, -Gb/s scheme is a promising candidate for a 400GbE optical network system. As compact 50-Gb/s light sources, directly modulated lasers (DMLs) [2]–[3] and electroabsorption modulators integrated with distributed-feedback lasers (EADFB lasers) [4]–[6] have been reported.

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Cites in Papers - IEEE (1)

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1.
Mizuki Shirao, Keisuke Kojima, Hiromitsu Itamoto, "53.2 Gb/s NRZ transmission over 10 km using high speed EML for 400GbE", 2015 Opto-Electronics and Communications Conference (OECC), pp.1-3, 2015.
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References

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