Contents Forming-free resistive memories (RRAM) have recently attracted significant attention as the forming process requires high voltage and can lead to low yield because of current overshoot [1]–[2]. We have recently demonstrated forming-free switching with multi-level operation in TiN/HfTiOx/TiN resistive memories [3]. However, a fundamental understanding of the switching mechanisms is lacking. Recently the Quantum Point Contact model (QPC) has been applied to analyze switching behavior of conductive filament based resistive memories [4]–[5]. Investigation of multi-level switching in HfTiOx-based resistive memories using the QPC model has not been attempted previously. In this work we have investigated the multi-level conduction mechanism of forming-free HfTiOx RRAMs using the QPC model. We demonstrate that the model can successfully describe the entire dynamic range of multi-level switching for the HfTiOx RRAMs.
Abstract:
Forming-free resistive memories (RRAM) have recently attracted significant attention as the forming process requires high voltage and can lead to low yield because of cur...Show MoreMetadata
Abstract:
Forming-free resistive memories (RRAM) have recently attracted significant attention as the forming process requires high voltage and can lead to low yield because of current overshoot [1-2]. We have recently demonstrated forming-free switching with multi-level operation in TiN/HfTiOx/TiN resistive memories [3]. However, a fundamental understanding of the switching mechanisms is lacking. Recently the Quantum Point Contact model (QPC) has been applied to analyze switching behavior of conductive filament based resistive memories [4-5]. Investigation of multi-level switching in HfTiOx-based resistive memories using the QPC model has not been attempted previously. In this work we have investigated the multi-level conduction mechanism of forming-free HfTiOx RRAMs using the QPC model. We demonstrate that the model can successfully describe the entire dynamic range of multi-level switching for the HfTiOx RRAMs.
Published in: 72nd Device Research Conference
Date of Conference: 22-25 June 2014
Date Added to IEEE Xplore: 07 August 2014
ISBN Information:
Print ISSN: 1548-3770
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1.
H. S. P. Wong et al., Proc. of IEEE., vol. 100, pp. 1951, 2012.
2.
S. Yu et al., Int. Electron Devices Meet. 2012.
3.
B. Chakrabarti et al., IEEE Electron. Dev. Lett., vol. 34, pp. 867, 2013.
4.
E. Miranda et al., IEEE Electron. Dev. Lett., vol. 33, pp. 1474, 2012.
5.
L. Goux et al., Symp. on VLSI Tech. 2012.
6.
S. G. Park, Ph.D., Materials Science and Engg., Stanford University, Stanford, CA, 2011.
