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Compact Flip-Chip Interconnection 112-Gbit/s EADFB Laser Array Module With High Eye-Mask Margin | IEEE Journals & Magazine | IEEE Xplore
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Journals & Magazines >Journal of Lightwave Technology >Volume: 32 Issue: 1

Compact Flip-Chip Interconnection 112-Gbit/s EADFB Laser Array Module With High Eye-Mask Margin

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Shigeru Kanazawa; Takeshi Fujisawa; Nobuhiro Nunoya; Akira Ohki; Kiyoto Takahata; Hiroaki Sanjoh
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Abstract:

The first compact and high-performance optical transmitter using flip-chip interconnects has been developed for a 112-Gbit/s transceiver. The flip-chip interconnects prov...Show More

Metadata

Abstract:

The first compact and high-performance optical transmitter using flip-chip interconnects has been developed for a 112-Gbit/s transceiver. The flip-chip interconnects provide lower crosstalk and a higher modulation bandwidth than wire interconnects. The flip-chip interconnection module has 3-dB frequency bandwidths of over 30 GHz. This value is up to 5 GHz better than that of a wire interconnection module. Under four-channel simultaneous operation, the OTU4 mask margins for all four lanes of the flip-chip interconnection module exceed 37%. These values are degraded up to only 4% compared with those for single-channel operation. In addition, an error-free transmission through 10 km of single-mode fiber at 112 Gbit/s is demonstrated.
Published in: Journal of Lightwave Technology ( Volume: 32, Issue: 1, January 2014)
Page(s): 115 - 121
Date of Publication: 14 November 2013

ISSN Information:

DOI: 10.1109/JLT.2013.2291034
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Shigeru Kanazawa was born in Kobe, Japan, in 1982. He received the B.S. and M.S. degrees from Tokyo Institute of Technology, Tokyo, Japan, in 2005 and 2007, respectively. In April 2007, he joined Nippon Telegraph and Telephone Photonics Laboratories, Atsugi, Kanagawa, Japan. He has been engaged in the research and development of optical semiconductor devices and integrated devices for optical communications systems. Mr. K...Show More
Shigeru Kanazawa was born in Kobe, Japan, in 1982. He received the B.S. and M.S. degrees from Tokyo Institute of Technology, Tokyo, Japan, in 2005 and 2007, respectively. In April 2007, he joined Nippon Telegraph and Telephone Photonics Laboratories, Atsugi, Kanagawa, Japan. He has been engaged in the research and development of optical semiconductor devices and integrated devices for optical communications systems. Mr. K...View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Takeshi Fujisawa was born in Sapporo, Japan, on January 12, 1979. He received the B.E., M.E., and Ph.D. degrees in electronic engineering from Hokkaido University, Sapporo, Japan, in 2001, 2003, and 2005, respectively. He is currently with Nippon Telegraph and Telephone Photonics Laboratories, Kanagawa, Japan. His current research interests include the theoretical modeling of optoelectronic devices and the development of ...Show More
Takeshi Fujisawa was born in Sapporo, Japan, on January 12, 1979. He received the B.E., M.E., and Ph.D. degrees in electronic engineering from Hokkaido University, Sapporo, Japan, in 2001, 2003, and 2005, respectively. He is currently with Nippon Telegraph and Telephone Photonics Laboratories, Kanagawa, Japan. His current research interests include the theoretical modeling of optoelectronic devices and the development of ...View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Nobuhiro Nunoya received the B.E., M.E., and Ph. D degrees in physical electronics from Tokyo Institute of Technology, Japan, in 1997, 1999, and 2001, respectively. In 2002, he joined Nippon Telegraph and Telephone (NTT) Photonics Laboratories, NTT Corporation, Kanagawa, Japan. From 2008 to 2009, he was a Visiting Researcher at the University of California, Santa Barbara, CA, USA. He is currently with NTT Photonics Labora...Show More
Nobuhiro Nunoya received the B.E., M.E., and Ph. D degrees in physical electronics from Tokyo Institute of Technology, Japan, in 1997, 1999, and 2001, respectively. In 2002, he joined Nippon Telegraph and Telephone (NTT) Photonics Laboratories, NTT Corporation, Kanagawa, Japan. From 2008 to 2009, he was a Visiting Researcher at the University of California, Santa Barbara, CA, USA. He is currently with NTT Photonics Labora...View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Akira Ohki was born in Saitama, Japan, on November 30, 1961. He received the B.E. and M.E. degrees from Nagoya University, Nagoya, USA, in 1984 and 1986, respectively, and the Ph.D. degree in electrical engineering from Nagoya University in 1994. In 1986, he joined Nippon Telegraph and Telephone (NTT) Ibaraki Electrical Communication Laboratories, Ibaraki, where he engaged in research on the MOVPE growth of compound semic...Show More
Akira Ohki was born in Saitama, Japan, on November 30, 1961. He received the B.E. and M.E. degrees from Nagoya University, Nagoya, USA, in 1984 and 1986, respectively, and the Ph.D. degree in electrical engineering from Nagoya University in 1994. In 1986, he joined Nippon Telegraph and Telephone (NTT) Ibaraki Electrical Communication Laboratories, Ibaraki, where he engaged in research on the MOVPE growth of compound semic...View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Kiyoto Takahata was born in Kyoto, Japan, on April 21, 1964. He received the B.E. and M.E. degrees in physical engineering from Kyoto University, Kyoto, Japan, in 1988 and 1990, respectively, and the Ph.D. degree from the Tokyo Institute of Technology, Tokyo, Japan, in 2010. In 1990, he joined NTT Opto-electronics (now Photonics) Laboratories, Kanagawa, Japan, where he was initially engaged in research on a wavelength con...Show More
Kiyoto Takahata was born in Kyoto, Japan, on April 21, 1964. He received the B.E. and M.E. degrees in physical engineering from Kyoto University, Kyoto, Japan, in 1988 and 1990, respectively, and the Ph.D. degree from the Tokyo Institute of Technology, Tokyo, Japan, in 2010. In 1990, he joined NTT Opto-electronics (now Photonics) Laboratories, Kanagawa, Japan, where he was initially engaged in research on a wavelength con...View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Hiroaki Sanjoh was born in Hokkaido, Japan in 1968. He received the B.E. and M.E. degrees in applied physics from Hokkaido University, Sapporo, Japan, in 1990 and 1992, respectively. In 1992, he joined Nippon Telegraph and Telephone (NTT) Optoelectronics Laboratories, Kanagawa, Japan. He is currently with NTT Photonics laboratories, Kanagawa, Japan, where he was engaged in developmental research on optical semiconductor d...Show More
Hiroaki Sanjoh was born in Hokkaido, Japan in 1968. He received the B.E. and M.E. degrees in applied physics from Hokkaido University, Sapporo, Japan, in 1990 and 1992, respectively. In 1992, he joined Nippon Telegraph and Telephone (NTT) Optoelectronics Laboratories, Kanagawa, Japan. He is currently with NTT Photonics laboratories, Kanagawa, Japan, where he was engaged in developmental research on optical semiconductor d...View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Ryuzo Iga was born in Toyama, Japan, in 1962. He received the B.E. and M.E. degrees in applied fine chemistry and the D.E. degree in electromagnetic energy engineering from Osaka University, Osaka, Japan, in 1985, 1987, and 1995, respectively. In 1987, he joined NTT Opto-electronics Laboratories. Since then, he has been engaged in research on the crystal growth of III–V semiconductor compounds. His doctoral dissertation w...Show More
Ryuzo Iga was born in Toyama, Japan, in 1962. He received the B.E. and M.E. degrees in applied fine chemistry and the D.E. degree in electromagnetic energy engineering from Osaka University, Osaka, Japan, in 1985, 1987, and 1995, respectively. In 1987, he joined NTT Opto-electronics Laboratories. Since then, he has been engaged in research on the crystal growth of III–V semiconductor compounds. His doctoral dissertation w...View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Hiroyuki Ishii was born in Chiba, Japan, in 1966. He received the B.E., M.E., and Ph.D. degrees in electronics and communication engineering from Waseda University, Tokyo, Japan, in 1988, 1990, and 1999 respectively. In 1990, he joined NTT Opto-electronics Laboratories (now NTT Photonics Laboratories), Kanagawa, Japan. Since then, he has been engaged in developmental research on semiconductor lasers and integrated devices...Show More
Hiroyuki Ishii was born in Chiba, Japan, in 1966. He received the B.E., M.E., and Ph.D. degrees in electronics and communication engineering from Waseda University, Tokyo, Japan, in 1988, 1990, and 1999 respectively. In 1990, he joined NTT Opto-electronics Laboratories (now NTT Photonics Laboratories), Kanagawa, Japan. Since then, he has been engaged in developmental research on semiconductor lasers and integrated devices...View more
Contents

I. Introduction

With the rapid growth of internet traffic, we need to increase the throughput of optical communication networks. 100-Gbit/s Ethernet [1] and the Optical-channel Transport Unit (OTU4) [2] have been standardized to meet this demand. For long reach applications over single-mode fiber (SMF), 800-GHz LAN-WDM using four 25.78-/27.95-Gbit/s optical signals in the 1.3-μm band was adopted. For 100-/112-Gbit/s applications, a centum form-factor pluggable (CFP) [3] transceiver was defined in the CFP Multi-Source Agreement (MSA). The current CFP transceivers consist of many discrete components. For example, their transmitter section consists of four electroabsorption modulators integrated with DFB laser (EADFB laser) modules [4]–[9] and an optical multiplexer (MUX). Therefore, the size of the CFP transceiver is rather large and requires downsizing. CFP2 and CFP4 have been under discussion in relation to the CFP MSA as small and cost effective next-generation 100-/112-Gbit/s transceivers.

NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Shigeru Kanazawa was born in Kobe, Japan, in 1982. He received the B.S. and M.S. degrees from Tokyo Institute of Technology, Tokyo, Japan, in 2005 and 2007, respectively. In April 2007, he joined Nippon Telegraph and Telephone Photonics Laboratories, Atsugi, Kanagawa, Japan. He has been engaged in the research and development of optical semiconductor devices and integrated devices for optical communications systems. Mr. Kanazawa is a Member of the Japan Society of Applied Physics and the Institute of Electronics, Information and Communication Engineers of Japan.
Shigeru Kanazawa was born in Kobe, Japan, in 1982. He received the B.S. and M.S. degrees from Tokyo Institute of Technology, Tokyo, Japan, in 2005 and 2007, respectively. In April 2007, he joined Nippon Telegraph and Telephone Photonics Laboratories, Atsugi, Kanagawa, Japan. He has been engaged in the research and development of optical semiconductor devices and integrated devices for optical communications systems. Mr. Kanazawa is a Member of the Japan Society of Applied Physics and the Institute of Electronics, Information and Communication Engineers of Japan.View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Takeshi Fujisawa was born in Sapporo, Japan, on January 12, 1979. He received the B.E., M.E., and Ph.D. degrees in electronic engineering from Hokkaido University, Sapporo, Japan, in 2001, 2003, and 2005, respectively. He is currently with Nippon Telegraph and Telephone Photonics Laboratories, Kanagawa, Japan. His current research interests include the theoretical modeling of optoelectronic devices and the development of semiconductor lasers. Dr. Fujisawa is a member of the Institute of Electronics, Information and Communication Engineers and the IEEE. From 2003 to 2006, he was a Research Fellow of the Japan Society for the Promotion of Science.
Takeshi Fujisawa was born in Sapporo, Japan, on January 12, 1979. He received the B.E., M.E., and Ph.D. degrees in electronic engineering from Hokkaido University, Sapporo, Japan, in 2001, 2003, and 2005, respectively. He is currently with Nippon Telegraph and Telephone Photonics Laboratories, Kanagawa, Japan. His current research interests include the theoretical modeling of optoelectronic devices and the development of semiconductor lasers. Dr. Fujisawa is a member of the Institute of Electronics, Information and Communication Engineers and the IEEE. From 2003 to 2006, he was a Research Fellow of the Japan Society for the Promotion of Science.View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Nobuhiro Nunoya received the B.E., M.E., and Ph. D degrees in physical electronics from Tokyo Institute of Technology, Japan, in 1997, 1999, and 2001, respectively. In 2002, he joined Nippon Telegraph and Telephone (NTT) Photonics Laboratories, NTT Corporation, Kanagawa, Japan. From 2008 to 2009, he was a Visiting Researcher at the University of California, Santa Barbara, CA, USA. He is currently with NTT Photonics Laboratories. His current research interests include semiconductor lasers and integrated devices for optical communications. Dr. Nunoya is a member of the Japan Society of Applied Physics, the Institute of Electronics, Information and Communication Engineers, and the IEEE/Photonics Society.
Nobuhiro Nunoya received the B.E., M.E., and Ph. D degrees in physical electronics from Tokyo Institute of Technology, Japan, in 1997, 1999, and 2001, respectively. In 2002, he joined Nippon Telegraph and Telephone (NTT) Photonics Laboratories, NTT Corporation, Kanagawa, Japan. From 2008 to 2009, he was a Visiting Researcher at the University of California, Santa Barbara, CA, USA. He is currently with NTT Photonics Laboratories. His current research interests include semiconductor lasers and integrated devices for optical communications. Dr. Nunoya is a member of the Japan Society of Applied Physics, the Institute of Electronics, Information and Communication Engineers, and the IEEE/Photonics Society.View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Akira Ohki was born in Saitama, Japan, on November 30, 1961. He received the B.E. and M.E. degrees from Nagoya University, Nagoya, USA, in 1984 and 1986, respectively, and the Ph.D. degree in electrical engineering from Nagoya University in 1994. In 1986, he joined Nippon Telegraph and Telephone (NTT) Ibaraki Electrical Communication Laboratories, Ibaraki, where he engaged in research on the MOVPE growth of compound semiconductor materials. In 1993, he moved to NTT Opto-electronics Laboratories, Atsugi-city, Japan, where he engaged in the design and development of opto-electronics modules for fiber optic communication networks. Dr. Ohki is a member of the Institute of Electronics, Information and Communication Engineers of Japan.
Akira Ohki was born in Saitama, Japan, on November 30, 1961. He received the B.E. and M.E. degrees from Nagoya University, Nagoya, USA, in 1984 and 1986, respectively, and the Ph.D. degree in electrical engineering from Nagoya University in 1994. In 1986, he joined Nippon Telegraph and Telephone (NTT) Ibaraki Electrical Communication Laboratories, Ibaraki, where he engaged in research on the MOVPE growth of compound semiconductor materials. In 1993, he moved to NTT Opto-electronics Laboratories, Atsugi-city, Japan, where he engaged in the design and development of opto-electronics modules for fiber optic communication networks. Dr. Ohki is a member of the Institute of Electronics, Information and Communication Engineers of Japan.View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Kiyoto Takahata was born in Kyoto, Japan, on April 21, 1964. He received the B.E. and M.E. degrees in physical engineering from Kyoto University, Kyoto, Japan, in 1988 and 1990, respectively, and the Ph.D. degree from the Tokyo Institute of Technology, Tokyo, Japan, in 2010. In 1990, he joined NTT Opto-electronics (now Photonics) Laboratories, Kanagawa, Japan, where he was initially engaged in research on a wavelength conversion device based on a semiconductor laser. Since 1993, he has been engaged in research on high-speed monolithically integrated photoreceivers, ultrafast optical packet processing based on optoelectronic circuits, and semiconductor lasers. He is a member of the Japan Society of Applied Physics and the Institute of Electronics, Information, and Communication Engineers of Japan.
Kiyoto Takahata was born in Kyoto, Japan, on April 21, 1964. He received the B.E. and M.E. degrees in physical engineering from Kyoto University, Kyoto, Japan, in 1988 and 1990, respectively, and the Ph.D. degree from the Tokyo Institute of Technology, Tokyo, Japan, in 2010. In 1990, he joined NTT Opto-electronics (now Photonics) Laboratories, Kanagawa, Japan, where he was initially engaged in research on a wavelength conversion device based on a semiconductor laser. Since 1993, he has been engaged in research on high-speed monolithically integrated photoreceivers, ultrafast optical packet processing based on optoelectronic circuits, and semiconductor lasers. He is a member of the Japan Society of Applied Physics and the Institute of Electronics, Information, and Communication Engineers of Japan.View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Hiroaki Sanjoh was born in Hokkaido, Japan in 1968. He received the B.E. and M.E. degrees in applied physics from Hokkaido University, Sapporo, Japan, in 1990 and 1992, respectively. In 1992, he joined Nippon Telegraph and Telephone (NTT) Optoelectronics Laboratories, Kanagawa, Japan. He is currently with NTT Photonics laboratories, Kanagawa, Japan, where he was engaged in developmental research on optical semiconductor devices.
Hiroaki Sanjoh was born in Hokkaido, Japan in 1968. He received the B.E. and M.E. degrees in applied physics from Hokkaido University, Sapporo, Japan, in 1990 and 1992, respectively. In 1992, he joined Nippon Telegraph and Telephone (NTT) Optoelectronics Laboratories, Kanagawa, Japan. He is currently with NTT Photonics laboratories, Kanagawa, Japan, where he was engaged in developmental research on optical semiconductor devices.View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Ryuzo Iga was born in Toyama, Japan, in 1962. He received the B.E. and M.E. degrees in applied fine chemistry and the D.E. degree in electromagnetic energy engineering from Osaka University, Osaka, Japan, in 1985, 1987, and 1995, respectively. In 1987, he joined NTT Opto-electronics Laboratories. Since then, he has been engaged in research on the crystal growth of III–V semiconductor compounds. His doctoral dissertation was on selective growth by laser-assisted MOMBE. In 1999, he joined NTT Photonics Laboratories. His current research interests include MOVPE growth technologies for the fabrication of optical integrated devices. Dr. Iga is a member of the Japan Society of Applied Physics.
Ryuzo Iga was born in Toyama, Japan, in 1962. He received the B.E. and M.E. degrees in applied fine chemistry and the D.E. degree in electromagnetic energy engineering from Osaka University, Osaka, Japan, in 1985, 1987, and 1995, respectively. In 1987, he joined NTT Opto-electronics Laboratories. Since then, he has been engaged in research on the crystal growth of III–V semiconductor compounds. His doctoral dissertation was on selective growth by laser-assisted MOMBE. In 1999, he joined NTT Photonics Laboratories. His current research interests include MOVPE growth technologies for the fabrication of optical integrated devices. Dr. Iga is a member of the Japan Society of Applied Physics.View more
NTT Corporation, NTT Photonics Laboratories, Atsugi-shi, Kanagawa, Japan
Hiroyuki Ishii was born in Chiba, Japan, in 1966. He received the B.E., M.E., and Ph.D. degrees in electronics and communication engineering from Waseda University, Tokyo, Japan, in 1988, 1990, and 1999 respectively. In 1990, he joined NTT Opto-electronics Laboratories (now NTT Photonics Laboratories), Kanagawa, Japan. Since then, he has been engaged in developmental research on semiconductor lasers and integrated devices for optical communications systems. Dr. Ishii is a member of the Japan Society of Applied Physics, the Institute of Electronics, Information and Communication Engineers, and the IEEE/Photonics Society.
Hiroyuki Ishii was born in Chiba, Japan, in 1966. He received the B.E., M.E., and Ph.D. degrees in electronics and communication engineering from Waseda University, Tokyo, Japan, in 1988, 1990, and 1999 respectively. In 1990, he joined NTT Opto-electronics Laboratories (now NTT Photonics Laboratories), Kanagawa, Japan. Since then, he has been engaged in developmental research on semiconductor lasers and integrated devices for optical communications systems. Dr. Ishii is a member of the Japan Society of Applied Physics, the Institute of Electronics, Information and Communication Engineers, and the IEEE/Photonics Society.View more
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