A 90 - 100-GHz 4 x 4 SiGe BiCMOS Polarimetric Transmit/Receive Phased Array With Simultaneous Receive-Beams Capabilities

This paper presents a 4 × 4 transmit/receive (T/R) SiGe BiCMOS phased-array chip at 90-100 GHz with vertical and horizontal polarization capabilities, 3-bit gain control (9 dB), and 4-bit phase control. The 4 × 4 phased array fits into a 1.6×1.5 mm² grid, which is required at 94 GHz for wide scan-angle designs. The chip has simultaneous receive (R_x) beam capabilities (V and H) and this is accomplished using dual-nested 16:1 Wilkinson combiners/divider with high isolation. The phase shifter is based on a vector modulator with optimized design between circuit level and electromagnetic simulation and results in 1 dB and gain and phase error, respectively, at 85-110 GHz. The behavior of the vector modulator phase distortion versus input power level is investigated and measured, and design guidelines are given for proper operation in a transmit (Tx) chain. The V and H Rx paths result in a gain of 22 and 25 dB, respectively, a noise figure of 9-9.5 (max. gain), and 11 dB (min. gain) measured without the T/R switch, and an input P1 dB of -31 to -26 dBm over the gain control range. The measured output P_sat is ~ -5 dBm per channel, limited by the T/R switch loss. Measurements show ±0.6- and ±0.75-dB variation between the 4 × 4 array elements in the Tx mode (P_sat) and Rx mode, respectively, and 40-dB coupling between the different channels on the chip. The chip consumes 1100 mA from a 2-V supply in both the Tx and Rx modes. The design can be scaled to >10 000 elements using polyimide redistribution layers on top of the chip and the application areas are in W-band radars for landing systems.

I. Introduction

Due to their high and density of integration, SiGe and CMOS RF integrated circuits (RFICs) are now the technology of choice for millimeter-wave phased arrays. Designs with 8–32 elements based on the All-RF architecture have been successfully demonstrated at 45–110 GHz in transmit (Tx), receive (Rx) or transmit/receive (T/R) modes [1]–[8]. The silicon designs allow the integration of several elements on the same chip, together with the power-combining network, up/downconversion blocks, synthesizers, and all the necessary digital control electronics. The silicon designs also result in Fig. 1.

Polarimetric T/R 16:1 4 × 4 phased array with simultaneous Rx beams and dual nested Wilkinson combiners.