Fatih Golcuk - IEEE Xplore Author Profile
Subscribe
ADVANCED SEARCH

Author details

< Back

Fatih Golcuk

Also published under: Faith Golcuk, F. Golcuk

Publications
12
Citations
647
Publications by Year
20122017
Co-Authors:
Show All Co-Authors (24)
Image of author Fatih Golcuk

Fatih Golcuk

Also published under: Faith Golcuk, F. Golcuk

Affiliation

MediaTek, San Jose, CA

Publication Topics

Biography

Fatih Golcuk (S'11) received the B.S. degree in electronics and communication engineering from Istanbul Technical University, Istanbul, Turkey, in 2005 and the M.S. degree in electronics engineering from Istanbul Technical University, Istanbul, Turkey, in 2008.,From 2006 to 2010, he worked as a RFIC/MMIC design engineer at Hittite Microwave Corporation, Istanbul, Turkey. He is currently working towards the Ph.D. degree in electrical and computer engineering at the University of California at San Diego. His research interests include RF and millimeter-wave integrated circuits and systems in silicon technologies.(Based on document published on 18 November 2013).
Publications
12
Citations
647
Publications by Year
20122017
Co-Authors:
Show All Co-Authors (24)
Author's Published Works

Showing 1-12 of 12 results

  • Sort

Filter Results

Show

Sort By

Results

17.1 A digitally assisted CMOS WiFi 802.11ac/11ax front-end module achieving 12% PA efficiency at 20dBm output power with 160MHz 256-QAM OFDM signal

Yuen Hui Chee;Fatih Golcuk;Toru Matsuura;Christopher Beale;James F. Wang;Osama Shanaa

2017 IEEE International Solid-State Circuits Conference (ISSCC)
Year: 2017 | Conference Paper |
Cited by: Papers (18)
Front-end modules (FEM) typically employ expensive III-V or SiGe technologies to provide relatively higher PA output power and lower LNA noise figure (NF) for larger distance coverage compared to what can be achieved in a CMOS transceiver SoC [1]. The WiFi FEM is typically designed as a standalone entity using linear and inefficient PA topologies, such as Class-A/AB, resulting in an FEM not taking...Show More

17.1 A digitally assisted CMOS WiFi 802.11ac/11ax front-end module achieving 12% PA efficiency at 20dBm output power with 160MHz 256-QAM OFDM signal

Yuen Hui Chee;Fatih Golcuk;Toru Matsuura;Christopher Beale;James F. Wang;Osama Shanaa

Year: 2017 | Conference Paper |

Millimeter-wave large-scale phased-arrays for 5G systems

Gabriel M. Rebeiz;Sang-Young Kim;Ozgur Inac;Woorim Shin;Ozan Gurbuz;Yu-Chin Ou;Fatih Golcuk;Tumay Kanar;Bon-Hyun Ku

2015 IEEE MTT-S International Microwave Symposium
Year: 2015 | Conference Paper |
This talk will present our latest work on silicon RFICs for phased-array applications with emphasis on very large chips with built-in-self-test capabilities for 5G systems. SiGe is shown to be ideal for mm-wave applications due to its high temperature performance (automotive radars, base-stations, defense systems, etc.) and lower power consumption. These chips drastically reduce the cost of microw...Show More

Millimeter-wave large-scale phased-arrays for 5G systems

Gabriel M. Rebeiz;Sang-Young Kim;Ozgur Inac;Woorim Shin;Ozan Gurbuz;Yu-Chin Ou;Fatih Golcuk;Tumay Kanar;Bon-Hyun Ku

Year: 2015 | Conference Paper |

Wafer-Scale Millimeter-Wave Phased-Array RFICs

Gabriel M. Rebeiz;Woorim Shin;Faith Golcuk;Ozgur Inac;Samet Zihir;Ozan Gurbuz;Jennifer Edwards;Tumay Kanar

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
Year: 2014 | Conference Paper |
Cited by: Papers (5)
Presents a summary of the millimeter-wave wafer-scale phased array work at UCSD. This concept can drastically reduce the cost of millimeter-wave phased arrays by combining the RFIC blocks, antennas, power distribution and summing, digital control and up and down converters all on the same wafer (or large piece of silicon), and eliminates all RF transitions in and out of the chip, therefore resulti...Show More

Wafer-Scale Millimeter-Wave Phased-Array RFICs

Gabriel M. Rebeiz;Woorim Shin;Faith Golcuk;Ozgur Inac;Samet Zihir;Ozan Gurbuz;Jennifer Edwards;Tumay Kanar

Year: 2014 | Conference Paper |

A 90–100 Ghz 4×4 sige BiCMOS polarimetric transmit-receive phased array with simultaneous receive-beams capabilities

F. Golcuk;T. Kanar;G. M. Rebeiz

2013 IEEE International Symposium on Phased Array Systems and Technology
Year: 2013 | Conference Paper |
Cited by: Papers (3) | Patents (1)
This paper presents a 4×4 transmit/receive SiGe BiCMOS phased array at 90-100 GHz with vertical and horizontal polarization capabilities, and 3-bit amplitude and 4-bit phase control. The 4×4 phased array fits into a 1.6×1.5 mm2 grid, which is required at 94 GHz for wide scan-angle designs. This is accomplished using dual-nested 16:1 Wilkinson combiners/divider with > 40 dB isolation between the du...Show More

A 90–100 Ghz 4×4 sige BiCMOS polarimetric transmit-receive phased array with simultaneous receive-beams capabilities

F. Golcuk;T. Kanar;G. M. Rebeiz

Year: 2013 | Conference Paper |

A 0.37–0.43 THz wideband quadrupler with 160 μW peak output power in 45 nm CMOS

F. Golcuk;A. Fung;G. M. Rebeiz

2013 IEEE MTT-S International Microwave Symposium Digest (MTT)
Year: 2013 | Conference Paper |
Cited by: Patents (1)
This paper presents a wideband 45 nm CMOS SOI quadrupler at 370 to > 430 GHz. The balanced multiplier results in a very low third harmonic component, and uses reflectors at the output port to reflect the fundamental and the second harmonic frequency into the quadrupler for improved efficiency. The measured output power is > 100 μW at 370-430 GHz with a peak value of 150-160 μW at 390-415 GHz and a...Show More

A 0.37–0.43 THz wideband quadrupler with 160 μW peak output power in 45 nm CMOS

F. Golcuk;A. Fung;G. M. Rebeiz

Year: 2013 | Conference Paper |

A 0.39–0.44 THz 2x4 Amplifier-Quadrupler Array With Peak EIRP of 3–4 dBm

Fatih Golcuk;Ozan Dogan Gurbuz;Gabriel M. Rebeiz

IEEE Transactions on Microwave Theory and Techniques
Year: 2013 | Volume: 61, Issue: 12 | Journal Article |
This paper presents a CMOS amplifier-multiplier-antenna array capable of generating an EIRP of 3-4 dBm at 420 GHz. The chip is built using a 45-nm CMOS SOI process, and efficient on-chip antennas are used to extract the power out of the chip. The design is based on a 90-110 GHz distribution network with splitters and amplifiers, and a balanced quadrupler capable of delivering up > 100 μW of power ...Show More

A 0.39–0.44 THz 2x4 Amplifier-Quadrupler Array With Peak EIRP of 3–4 dBm

Fatih Golcuk;Ozan Dogan Gurbuz;Gabriel M. Rebeiz

Year: 2013 | Volume: 61, Issue: 12 | Journal Article |

A 90–100-GHz Phased-Array Transmit/Receive Silicon RFIC Module With Built-In Self-Test

Ozgur Inac;Fatih Golcuk;Tumay Kanar;Gabriel M. Rebeiz

IEEE Transactions on Microwave Theory and Techniques
Year: 2013 | Volume: 61, Issue: 10 | Journal Article |
This paper presents the first built-in self-test system (BIST) for W-band transmit-receive phased-array modules. Low-loss high-isolation switches are attached to the RF input and output ports using λ/4 transmission-line sections, which result in a high shunt impedance when the BIST is disabled and minimal penalty in additional loss. A W-band in-phase/quadrature down-conversion mixer/receiver with ...Show More

A 90–100-GHz Phased-Array Transmit/Receive Silicon RFIC Module With Built-In Self-Test

Ozgur Inac;Fatih Golcuk;Tumay Kanar;Gabriel M. Rebeiz

Year: 2013 | Volume: 61, Issue: 10 | Journal Article |

A 0.32 THz SiGe 4x4 Imaging Array Using High-Efficiency On-Chip Antennas

Mehmet Uzunkol;Ozan D. Gurbuz;Fatih Golcuk;Gabriel M. Rebeiz

IEEE Journal of Solid-State Circuits
Year: 2013 | Volume: 48, Issue: 9 | Journal Article |
Cited by: Papers (98)
This paper presents a 0.32 THz 4x4 imaging array based on an advanced SiGe technology. Each pixel is composed of a high efficiency on-chip antenna meeting all metal-density rules, which is coupled to a SiGe detector and a low noise CMOS operational amplifier. A quartz superstrate is used on top of the imaging chip to improve the radiation efficiency. The array results in an average NEP of 34 pW/Hz...Show More

A 0.32 THz SiGe 4x4 Imaging Array Using High-Efficiency On-Chip Antennas

Mehmet Uzunkol;Ozan D. Gurbuz;Fatih Golcuk;Gabriel M. Rebeiz

Year: 2013 | Volume: 48, Issue: 9 | Journal Article |

A 163–180 GHz 2×2 amplifier-doubler array with peak EIRP of +5 dBm

F. Golcuk;J. M. Edwards;B. Cetinoneri;Y. A. Atesal;G. M. Rebeiz

2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Year: 2013 | Conference Paper |
Cited by: Papers (2)
This paper presents a 2×2 amplifier-multiplier array with on-chip antennas at 163-180 GHz in 45 nm CMOS SOI technology. The measured EIRP is > 2 dBm at 165-175 GHz with a peak value of 5 dBm at 170 GHz meeting the stringiest metal-density rules for antennas. The amplifiermultiplier architecture is scalable to N×M arrays for high EIRP and transmit power.Show More

A 163–180 GHz 2×2 amplifier-doubler array with peak EIRP of +5 dBm

F. Golcuk;J. M. Edwards;B. Cetinoneri;Y. A. Atesal;G. M. Rebeiz

Year: 2013 | Conference Paper |

A 90 - 100-GHz 4 x 4 SiGe BiCMOS Polarimetric Transmit/Receive Phased Array With Simultaneous Receive-Beams Capabilities

Fatih Golcuk;Tumay Kanar;Gabriel M. Rebeiz

IEEE Transactions on Microwave Theory and Techniques
Year: 2013 | Volume: 61, Issue: 8 | Journal Article |
This paper presents a 4 × 4 transmit/receive (T/R) SiGe BiCMOS phased-array chip at 90-100 GHz with vertical and horizontal polarization capabilities, 3-bit gain control (9 dB), and 4-bit phase control. The 4 × 4 phased array fits into a 1.6×1.5 mm2 grid, which is required at 94 GHz for wide scan-angle designs. The chip has simultaneous receive (Rx) beam capabilities (V and H) and this is accompli...Show More

A 90 - 100-GHz 4 x 4 SiGe BiCMOS Polarimetric Transmit/Receive Phased Array With Simultaneous Receive-Beams Capabilities

Fatih Golcuk;Tumay Kanar;Gabriel M. Rebeiz

Year: 2013 | Volume: 61, Issue: 8 | Journal Article |

Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers

Hayg-Taniel Dabag;Bassel Hanafi;Fatih Golcuk;Amir Agah;James F. Buckwalter;Peter M. Asbeck

IEEE Transactions on Microwave Theory and Techniques
Year: 2013 | Volume: 61, Issue: 4 | Journal Article |
Stacked field-effect transistor (FET) CMOS millimeter-wave power amplfiers (PAs) are studied with a focus on design of appropriate complex impedances between the transistors. The stacking of multiple FETs allows increasing the supply voltage, which, in turn, allows higher output power and a broader bandwidth output matching network. Different matching techniques for the intermediate nodes are anal...Show More

Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers

Hayg-Taniel Dabag;Bassel Hanafi;Fatih Golcuk;Amir Agah;James F. Buckwalter;Peter M. Asbeck

Year: 2013 | Volume: 61, Issue: 4 | Journal Article |

Millimeter-wave and terahertz sources and imaging systems based on 45nm CMOS technology

M. Uzunkol;F. Golcuk;B. Cetinoneri;Y. A. Atesal;O. D. Gurbuz;J. M. Edwards;G. M. Rebeiz

2012 IEEE/MTT-S International Microwave Symposium Digest
Year: 2012 | Conference Paper |
Cited by: Papers (4)
This paper presents the recent advances in sources and imaging arrays for >100 GHz applications. For sources, multiplier approach has recently demonstrated 1 mW of power at 200 GHz using 45 nm CMOS technology. For active imaging arrays, high-efficiency on-chip antennas coupled with low-noise CMOS SOI detectors are built at 300 GHz and 1 THz for low NEP systems.Show More

Millimeter-wave and terahertz sources and imaging systems based on 45nm CMOS technology

M. Uzunkol;F. Golcuk;B. Cetinoneri;Y. A. Atesal;O. D. Gurbuz;J. M. Edwards;G. M. Rebeiz

Year: 2012 | Conference Paper |

IEEE Account

Purchase Details

Profile Information

Need Help?

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.