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Compact Modeling of Quasi-Ballistic Silicon Nanowire MOSFETs | IEEE Journals & Magazine | IEEE Xplore

Compact Modeling of Quasi-Ballistic Silicon Nanowire MOSFETs


Abstract:

A compact model for the quasi-ballistic silicon nanowire MOSFET was developed by supplementing the ballistic framework previously disclosed by us with an original carrier...Show More

Abstract:

A compact model for the quasi-ballistic silicon nanowire MOSFET was developed by supplementing the ballistic framework previously disclosed by us with an original carrier-scattering model. The scattering model considers elastic scattering and optical phonon emission, which is the dominant route of energy relaxation in the device. The quasi-ballistic electric current showed a remarkable decrease compared with the ballistic counterpart. The relative decrease or “ballisticity” gradually improved when the channel length was reduced, but the value remained considerably less than the ballistic limit, even in the limit of zero channel length. The transport physics underlying the device characteristics is discussed.
Published in: IEEE Transactions on Electron Devices ( Volume: 59, Issue: 1, January 2012)
Page(s): 79 - 86
Date of Publication: 16 November 2011

ISSN Information:


I. Introduction

Recently, nanowire (NW) transistors have attracted wide attention, and analyses that focus on various aspects of the device operation have accumulated. We have offered a compact modeling of a ballistic Si NW MOSFET [1] based on a simple ballistic MOSFET modeling [2]. However, carrier scattering is the essential feature of quasi-ballistic transport, and its effects must be considered if realistic device properties are concerned. This paper is intended to incorporate scattering effects into the previous ballistic modeling and to provide a compact model of the quasi-ballistic Si NW MOSFET.

References

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