Abstract:
We report on fabrication of p/sup +//n diodes with junction depths less than 60 nm using gas immersion laser doping (GILD). Statistics for diodes with junction depths of ...Show MoreMetadata
Abstract:
We report on fabrication of p/sup +//n diodes with junction depths less than 60 nm using gas immersion laser doping (GILD). Statistics for diodes with junction depths of 39 nm and 50 nm, surface concentrations exceeding 10/sup 20/ atoms/cm3, and sheet resistances less than 160 /spl Omega///spl square/ are presented. Values for area, perimeter, and corner leakage currents are measured at less than 1.6 nA/cm2, 2.5 fA/μm and 10 fA/corner respectively, at 3.4 V reverse bias. These characteristics demonstrate that the laser doping process is viable for source/drain doping in 0.18 μm CMOS technology.
Published in: IEEE Electron Device Letters ( Volume: 17, Issue: 10, October 1996)
DOI: 10.1109/55.537075
Citations are not available for this document.
Cites in Papers - |
Cites in Papers - IEEE (1)
Select All
1.
M. Jurczak, T. Skotnicki, M. Paoli, B. Tormen, J. Martins, J.L. Regolini, D. Dutartre, P. Ribot, D. Lenoble, R. Pantel, S. Monfray, "Silicon-on-Nothing (SON)-an innovative process for advanced CMOS", IEEE Transactions on Electron Devices, vol.47, no.11, pp.2179-2187, 2000.
Cites in Papers - Other Publishers (17)
1.
Tomoyuki Miyahira, Kenji Kawai, Takashi Noguchi, Toshiharu Suzuki, Masateru Sato, "Anomalous Increase in Resistivity of Boron-Doped Silicon Film after Solid Phase Crystallization", Japanese Journal of Applied Physics, vol.48, no.3S2, pp.03B016, 2009.
2.
Takashi Noguchi, "
Effective Dopant Activation in Silicon Film Using Excimer Laser Annealing for High-Performance Thin Film Transistors
", Japanese Journal of Applied Physics, vol.47, no.3, pp.1858, 2008.
3.
Takashi Noguchi, Jang Yeon Kwon, Ji Sim Jung, Jong Man Kim, Kyung Bae Park, Hyuck Lim, Do Young Kim, Hans S. Cho, Hua Xian Yin, Wenxyu Xianyu, "Low-Temperature Process for Advanced Si Thin Film Transistor Technology", Japanese Journal of Applied Physics, vol.45, no.5S, pp.4321, 2006.
4.
E. Fogarassy, J. Venturini, Recent Advances in Laser Processing of Materials, pp.375, 2006.
5.
Dongkyu Lee, Sungkweon Baek, Sungho Heo, Changhee Cho, Gyoungho Buh, Taisu Park, Yugyun Shin, Hyunsang Hwang, "Ultrashallow p[sup +]∕n Junction Prepared by Low Energy BF[sub 3] Plasma Doping and KrF Excimer Laser Annealing", Electrochemical and Solid-State Letters, vol.9, no.1, pp.G19, 2006.
6.
Dongkyu Lee, Sungho Heo, Changhee Cho, G. H. Buh, Tai-su Park, Jongryeol Yoo, Yugyun Shin, Hyunsang Hwang, "Electrical Characteristics of Ultrashallow p[sup +]∕n Junction Formed by BF[sub 3] Plasma Doping and Two-Step Annealing Process", Electrochemical and Solid-State Letters, vol.9, no.4, pp.G121, 2006.
7.
S. Coutanson, E. Fogarassy, J. Venturini, "Mechanisms and application of the Excimer laser doping from spin-on glass sources for USJ fabrication", Applied Surface Science, vol.252, no.13, pp.4502, 2006.
8.
S. Coutanson, E. Fogarassy, J. Venturini, "Fabrication of p+/n Ultra Shallow Junctions (USJ) in silicon by excimer laser doping from spin-on glass sources", MRS Proceedings, vol.810, pp.C4.13, 2004.
9.
T. Noguchi, D.Y. Kim, J.Y. Kwon, K.B. Park, J.S. Jung, W.X. Xianyu, H.X. Yin, H.S. Cho, "Low Temperature Poly-Si TFT Technology", MRS Proceedings, vol.814, 2004.
10.
G.Y. Jeon, J.S. Kim, C.N. Whang, S. Im, J.-H. Song, J.H. Song, W.K. Choi, H.K. Kim, "Formation and characterizations of ultra-shallow p+–n junctions using B10H14 ion implantation", Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.206, pp.409, 2003.
11.
T. Noguchi, G. Kerrien, T. Sarnet, D. Débarre, J. Boulmer, D. Zahorski, M. Hernandez, C. Defranoux, C. Laviron, M.N. Semeria, "Single-Shot Excimer Laser Annealing and In Process Ellipsometry Analysis for Ultra Shallow Junctions", MRS Proceedings, vol.717, 2002.
12.
Lis K. Nanver, Egbert J. G. Goudena, "Ion Implantation", Wiley Encyclopedia of Electrical and Electronics Engineering, 1999.
13.
Jihwan Park, Hyunsang Hwang, "Comparison of Ultra-low-energy Ion Implantation of Boron and BF2", MRS Proceedings, vol.568, 1999.
14.
Jihwan Park, Yun-Jun Huh, Hyunsang Hwang, "Comparison of ultralow-energy ion implantation of boron and BF2 for ultrashallow p+/n junction formation", Applied Physics Letters, vol.74, no.9, pp.1248, 1999.
15.
Henley L. Liu, Steven S. Gearhart, John H. Booske, Wei Wang, "Recoil implantation of boron into silicon for ultrashallow junction formation: Modeling, fabrication, and characterization", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol.16, no.1, pp.415, 1998.
16.
Erin C. Jones, Emi Ishida, "Shallow junction doping technologies for ULSI", Materials Science and Engineering: R: Reports, vol.24, no.1-2, pp.1, 1998.
17.
Henley L. Liu, Steven S. Gearhart, John H. Booske, Wei Wang, "Ultra-shallow P+/N junctions formed by recoil implantation", Journal of Electronic Materials, vol.27, no.9, pp.1027, 1998.
