Abstract:
We report on fabrication of p/sup +//n diodes with junction depths less than 60 nm using gas immersion laser doping (GILD). Statistics for diodes with junction depths of ...Show MoreMetadata
Abstract:
We report on fabrication of p/sup +//n diodes with junction depths less than 60 nm using gas immersion laser doping (GILD). Statistics for diodes with junction depths of 39 nm and 50 nm, surface concentrations exceeding 10/sup 20/ atoms/cm3, and sheet resistances less than 160 /spl Omega///spl square/ are presented. Values for area, perimeter, and corner leakage currents are measured at less than 1.6 nA/cm2, 2.5 fA/μm and 10 fA/corner respectively, at 3.4 V reverse bias. These characteristics demonstrate that the laser doping process is viable for source/drain doping in 0.18 μm CMOS technology.
Published in: IEEE Electron Device Letters ( Volume: 17, Issue: 10, October 1996)
DOI: 10.1109/55.537075
Ultratech Stepper Corporation, San Jose, CA, USA
Ultratech Stepper Corporation, San Jose, CA, USA
Lawrence Livermore National Laboratories, Livermore, CA, USA
Ultratech Stepper Corporation, San Jose, CA, USA
Ultratech Stepper Corporation, San Jose, CA, USA
Ultratech Stepper Corporation, San Jose, CA, USA
Lawrence Livermore National Laboratories, Livermore, CA, USA
Ultratech Stepper Corporation, San Jose, CA, USA
