Abstract:
We investigated the MBE growth and optical characteristics of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MQWs on vicinal (110) InP substrates. The MQWs grown o...Show MoreMetadata
Abstract:
We investigated the MBE growth and optical characteristics of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MQWs on vicinal (110) InP substrates. The MQWs grown on the (110) substrates tilted towards [001~] indicate narrower excitonic linewidth in absorption spectra and stronger photoluminescence intensity than those of (001) MQWs. On the other hand, for the MQWs on the (110) tilted towards [001], we observed no excitonic absorption peaks and extremely-weak and broad PL spectra. The TED and TEM observations have clarified that these poor characteristics are due to structural fluctuation and atomic ordering in the MQWs. We also discuss a possible mechanism of the degradation.
Date of Conference: 09-13 May 1995
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-2147-2
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