Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth | IEEE Conference Publication | IEEE Xplore

Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth


Abstract:

A scalable, self-aligned In0.53Ga0.47As MOSFET process was developed and enhancement mode device operation was demonstrated. The 0.7 mum Lg device shows a maximum drive c...Show More

Abstract:

A scalable, self-aligned In0.53Ga0.47As MOSFET process was developed and enhancement mode device operation was demonstrated. The 0.7 mum Lg device shows a maximum drive current of 0.14 mA/mum at Vgs=4.0 V and Vds=2.5 V. The devices have almost an order of magnitude larger drive current than our previously reported MOSFETs. The channel layer was 5 nm thick InGaAs with InAlAs bottom barrier for vertical confinement. 4.7 nm of Al2O3 (~2 nm EOT) dielectric was deposited in an atomic layer deposition tool. After gate formation, self-aligned source/drain regions were defined by migration enhanced epitaxial (MEE) regrowth, and self-aligned in-situ Mo source/drain contacts were formed.
Date of Conference: 10-14 May 2009
Date Added to IEEE Xplore: 29 May 2009
ISBN Information:
Print ISSN: 1092-8669
Conference Location: Newport Beach, CA, USA

I. Introduction

Silicon MOSFETs may reach the scaling limit, if reliable low leakage sub-0.5 nm equivalent oxide thickness (EOT) gate dielectrics are not realized [1]. In this scenario, III-V semiconductors are investigated as alternative channel material because of their low electron effective mass and thus high electron velocities (v). is a leading candidate because of the experimentally observed high electron velocities in InGaAs channel HEMTs [2]. Besides the low electron effective mass, InGaAs has large inter-valley separations (0.5 eV for which means high velocities even under high applied fields. This ensures no degradation in electron transport properties in a high field drain region encountered in scaled MOSFETs.

References

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