Polarization-independent electroabsorption modulators using strain-compensated InGaAs-InAlAs MQW structures

The improved modulation properties of strain compensated InGaAs-InAlAs multiple quantum well (MQW) electroabsorption modulators and their modules have been demonstrated. Introduction of a 0.5% tensile strain in wells and a 0.5% compression in barriers provides highly efficient operation such as a low driving voltage (V/sub 20/ dB=1.6 V) and a large modulation bandwidth (f/sub 3/ dB>20 GHz). This is in addition to low polarization-dependence with an extinction ratio difference between TE and TM and polarization of less than 1 dB.