Construction and characterization of a 117 cm/sup 2/ silicon pixel detector | IEEE Journals & Magazine | IEEE Xplore

Construction and characterization of a 117 cm/sup 2/ silicon pixel detector


Abstract:

A silicon pixel detector, developed in RD19, and consisting of 4 planes, /spl sim/30 cm/sup 2/ each, is operating for the first time in the lead ion experiment WA97 at CE...Show More

Abstract:

A silicon pixel detector, developed in RD19, and consisting of 4 planes, /spl sim/30 cm/sup 2/ each, is operating for the first time in the lead ion experiment WA97 at CERN. The 288 CMOS readout chips are bump-bonded to 48 Si detector matrices, assembled in 8 identical arrays. The total number of pixel cells is nearly 300000 and each cell, 75 /spl mu/m/spl times/500 /spl mu/m, contains a complete signal processing chain. Overall dead area is less than 3%.<>
Published in: IEEE Transactions on Nuclear Science ( Volume: 42, Issue: 4, August 1995)
Page(s): 413 - 418
Date of Publication: 31 August 1995

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1.
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2.
F. Anghinolfi, P. Aspell, K. Bass, W. Beusch, L. Bosisio, C. Boutonnet, et al., "A 1006 element hybrid silicon pixel detector with strobed binary output", IEEE Trans. Nucl. Sci., vol. NS-39, pp. 650, 1992.
3.
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