I. Introduction
GaN-based compound semiconductor materials have been used widely to develop high-performance optical devices, such as high-power blue, green, and ultraviolet light-emitting diodes (LEDs). These LEDs are used extensively as back lighting in liquid-crystal displays, traffic lights, and indoor or outdoor displays1–5, Intensity degradation of high-power white-light LEDs is a well-known issue, which has been until recently mainly attributed to the degradation of the chip material. With the introduction of new improved chip materials the problem has shifted to the LED packaging and association with reliability. However, the high-power LED packaging and association with reliability have been less investigated in the literatures.