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Design-Time Optimization of Post-Silicon Tuned Circuits Using Adaptive Body Bias | IEEE Journals & Magazine | IEEE Xplore

Design-Time Optimization of Post-Silicon Tuned Circuits Using Adaptive Body Bias


Abstract:

Adaptive body biasing is a powerful technique that allows post-silicon tuning of individual manufactured dies such that each die optimally meets the delay and power const...Show More

Abstract:

Adaptive body biasing is a powerful technique that allows post-silicon tuning of individual manufactured dies such that each die optimally meets the delay and power constraints. Assigning individual bias control to each gate leads to severe overhead, rendering the method impractical. However, assigning a single bias control to all gates in the circuit prevents the method from compensating for intra-die variation and greatly reduces its effectiveness. In this paper, we propose a new variability-aware method that clusters gates at design time into a handful of carefully chosen independent body-bias groups, which are then individually tuned post-silicon for each die. We show that this allows us to obtain near-optimal performance and power characteristics with minimal overhead. For each gate, we generate the probability distribution of its post-silicon ideal body bias voltage using an efficient sampling method. We then use these distributions and their correlations to drive a statistically aware clustering technique. We study the physical design constraints and show how the area and wirelength overhead can be significantly limited using the proposed method. Compared with a fixed design-time based dual threshold voltage assignment method, we improve leakage power by 38%-68% while simultaneously reducing the standard deviation of delay by two to nine times.
Page(s): 481 - 494
Date of Publication: 15 February 2008

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I. Introduction

Modern CMOS circuits suffer from high parametric yield loss due to the strong dependence of leakage and delay on process parameters such as channel length and threshold voltage () [1]. A number of approaches have been proposed to mitigate this using pre-silicon statistical optimization. These approaches optimize the selection of design-time variables (such as gate sizes and s) to maximize yield [2], [3]. By using statistical models of the underlying silicon variation, these techniques aim to maximize the number of chips that will meet power and delay constraints post-silicon. However, since the obtained optimization decisions apply to the entire set of manufactured die, it is inevitable that for some dies with badly skewed process parameters, delay or power constraints will not be met post-silicon.

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