I. Introduction
Modern CMOS circuits suffer from high parametric yield loss due to the strong dependence of leakage and delay on process parameters such as channel length and threshold voltage () [1]. A number of approaches have been proposed to mitigate this using pre-silicon statistical optimization. These approaches optimize the selection of design-time variables (such as gate sizes and s) to maximize yield [2], [3]. By using statistical models of the underlying silicon variation, these techniques aim to maximize the number of chips that will meet power and delay constraints post-silicon. However, since the obtained optimization decisions apply to the entire set of manufactured die, it is inevitable that for some dies with badly skewed process parameters, delay or power constraints will not be met post-silicon.