ON-State Characteristics of a High-Power Photoconductive Switch Fabricated From Compensated 6-H Silicon Carbide | IEEE Journals & Magazine | IEEE Xplore

ON-State Characteristics of a High-Power Photoconductive Switch Fabricated From Compensated 6-H Silicon Carbide


Abstract:

The ON-state characteristics of a 6-H silicon carbide (SiC) photoconductive switch with vertical geometry, transverse illumination, and linear-mode operation are presente...Show More

Abstract:

The ON-state characteristics of a 6-H silicon carbide (SiC) photoconductive switch with vertical geometry, transverse illumination, and linear-mode operation are presented. The switch is triggered by an optical source with a photon energy that is less than the bandgap energy of SiC. Following low-power matching characteristics, the analysis of a design incorporating and layers next to the cathode shows higher hold-off voltage with an improved ON-state response mechanism. The p-layered photoconductive semiconductor switch (PCSS) can be operated at a maximum field of 875 kV/cm, whereas the n-layered PCSS, which is operating at a slightly lower field, shows higher current carrying capabilities. Higher current for the n-layer PCSS can be attributed to the nature of the region adjacent to the cathode. In the p-layered PCSS, this region inhibits an initial hole collection, thus decreasing the collected charge. In addition, a kink during the initial collection for the p-layered PCSS could influence the rise time when operating beyond 35-kV bias.
Published in: IEEE Transactions on Plasma Science ( Volume: 36, Issue: 1, February 2008)
Page(s): 287 - 292
Date of Publication: 08 February 2008

ISSN Information:

Author image of Kapil S. Kelkar
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Columbia, MO, USA
Kapil S. Kelkar was born in Pune, India, in 1979. He received the B.S. degree in electrical engineering from Pune University, Pune, in 2000, and the M.S. degree in electrical engineering from the University of Missouri—Columbia, Columbia, in 2003, where he is currently working toward the Ph.D. degree in the Department of Electrical and Computer Engineering.
From 2001 to 2003, he was a Graduate Research Assistant with the U...Show More
Kapil S. Kelkar was born in Pune, India, in 1979. He received the B.S. degree in electrical engineering from Pune University, Pune, in 2000, and the M.S. degree in electrical engineering from the University of Missouri—Columbia, Columbia, in 2003, where he is currently working toward the Ph.D. degree in the Department of Electrical and Computer Engineering.
From 2001 to 2003, he was a Graduate Research Assistant with the U...View more
Author image of Naz E. Islam
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Columbia, MO, USA
Naz E. Islam (M'96–SM'04) received the Ph.D. degree in engineering physics from the Department of Nuclear Engineering and Engineering Physics (NEER), Rensselaer Polytechnic Institute, Troy, NY, in December 1992. His Ph.D. dissertation was the study of the effects of space and nuclear radiation on circuits and electronics.
After his postdoctoral work with NEER, he was a National Research Council Fellow with the Air Force Re...Show More
Naz E. Islam (M'96–SM'04) received the Ph.D. degree in engineering physics from the Department of Nuclear Engineering and Engineering Physics (NEER), Rensselaer Polytechnic Institute, Troy, NY, in December 1992. His Ph.D. dissertation was the study of the effects of space and nuclear radiation on circuits and electronics.
After his postdoctoral work with NEER, he was a National Research Council Fellow with the Air Force Re...View more
Author image of Phumin Kirawanich
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Columbia, MO, USA
Phumin Kirawanich (S'02–M'04) received the M.S. and Ph.D. degrees in electrical engineering from the University of Missouri—Columbia, Columbia, in 1999 and 2002, respectively.
From 2002 to 2003, he was with the Power Electronics Research Center, University of Missouri—Columbia. Since 2003, he has been with the High Power Electromagnetic Radiation Laboratory, Department of Electrical and Computer Engineering, University of ...Show More
Phumin Kirawanich (S'02–M'04) received the M.S. and Ph.D. degrees in electrical engineering from the University of Missouri—Columbia, Columbia, in 1999 and 2002, respectively.
From 2002 to 2003, he was with the Power Electronics Research Center, University of Missouri—Columbia. Since 2003, he has been with the High Power Electromagnetic Radiation Laboratory, Department of Electrical and Computer Engineering, University of ...View more
Author image of Christopher M. Fessler
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Columbia, MO, USA
Christopher M. Fessler received the B.S. degree in electrical engineering from the University of Missouri—Columbia, Columbia, in 2005, where he is currently working toward the M.S. degree.
His research interests include pulsed-power, high power fiber optics, and silicon carbide photoconductive semiconductor switches.
Christopher M. Fessler received the B.S. degree in electrical engineering from the University of Missouri—Columbia, Columbia, in 2005, where he is currently working toward the M.S. degree.
His research interests include pulsed-power, high power fiber optics, and silicon carbide photoconductive semiconductor switches.View more
Author image of William C. Nunnally
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Columbia, MO, USA
William C. Nunnally (S'67–M'69–SM'07) received the B.S., M.S., and Ph.D. degrees in electrical engineering from the Texas Tech University, Lubbock, in 1969, 1971, and 1974, respectively.
After serving in the US Army, he was with the Magnetic Fusion Engineering Group, Los Alamos National Laboratory, Los Alamos, NM, in 1974. His 11-year tenure with Los Alamos included assignments in the Laser-Fusion Group, the Laser-Isotope-...Show More
William C. Nunnally (S'67–M'69–SM'07) received the B.S., M.S., and Ph.D. degrees in electrical engineering from the Texas Tech University, Lubbock, in 1969, 1971, and 1974, respectively.
After serving in the US Army, he was with the Magnetic Fusion Engineering Group, Los Alamos National Laboratory, Los Alamos, NM, in 1974. His 11-year tenure with Los Alamos included assignments in the Laser-Fusion Group, the Laser-Isotope-...View more

I. Introduction

Photoconductive semiconductor switches (pcsss) are fabricated from a variety of materials, including silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC). The electrical and material characteristics of each semiconductor type are different, and their applications also vary, ranging from low-impedance high-current firing sets in munitions to high-voltage high-current pulsars for ground-penetrating radar. Since the device parameters (e.g., rise-time requirement for the PCSS for high-power microwave generation may be different from those used in the firing sets) for optimum performance also depend on the specific application type, the analysis of a PCSS should be based not only on the material characteristics but also on the operational dynamics for each application. Important parameters include the blocking voltage and the pulse rise time.

Author image of Kapil S. Kelkar
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Columbia, MO, USA
Kapil S. Kelkar was born in Pune, India, in 1979. He received the B.S. degree in electrical engineering from Pune University, Pune, in 2000, and the M.S. degree in electrical engineering from the University of Missouri—Columbia, Columbia, in 2003, where he is currently working toward the Ph.D. degree in the Department of Electrical and Computer Engineering.
From 2001 to 2003, he was a Graduate Research Assistant with the University of Missouri—Columbia, where he conducted a research on characterization and modeling a high-power photoconductive gallium arsenide switch. His current research work includes analysis of silicon carbide as a high-power photoconductive-switch material for linear and nonlinear applications. His research interests include thermal and radiation effects on photoconductive switches, modeling semiconductor devices, and integrated circuits.
Kapil S. Kelkar was born in Pune, India, in 1979. He received the B.S. degree in electrical engineering from Pune University, Pune, in 2000, and the M.S. degree in electrical engineering from the University of Missouri—Columbia, Columbia, in 2003, where he is currently working toward the Ph.D. degree in the Department of Electrical and Computer Engineering.
From 2001 to 2003, he was a Graduate Research Assistant with the University of Missouri—Columbia, where he conducted a research on characterization and modeling a high-power photoconductive gallium arsenide switch. His current research work includes analysis of silicon carbide as a high-power photoconductive-switch material for linear and nonlinear applications. His research interests include thermal and radiation effects on photoconductive switches, modeling semiconductor devices, and integrated circuits.View more
Author image of Naz E. Islam
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Columbia, MO, USA
Naz E. Islam (M'96–SM'04) received the Ph.D. degree in engineering physics from the Department of Nuclear Engineering and Engineering Physics (NEER), Rensselaer Polytechnic Institute, Troy, NY, in December 1992. His Ph.D. dissertation was the study of the effects of space and nuclear radiation on circuits and electronics.
After his postdoctoral work with NEER, he was a National Research Council Fellow with the Air Force Research Laboratory, Kirtland AFB, Albuquerque, NM. In July 1997, he was with the Electrical and Computer Engineering Department, University of New Mexico, as a Research Associate Professor. Since 2003, he has been on the faculty of the Department of Electrical and Computer Engineering, University of Missouri—Columbia, Columbia, as an Associate Professor. He has a number of research papers to his credit and has also contributed articles to the book UltraWideband Short-Pulse Electromagnetics (Kluwer, 2007). His research interests are in the physics and technology of energetic charged particle's interactions with semiconductor devices, dose rate and total dose effects, study of photonic devices used in the generation of high-power microwaves, and semiconductor-device-simulation studies.
Naz E. Islam (M'96–SM'04) received the Ph.D. degree in engineering physics from the Department of Nuclear Engineering and Engineering Physics (NEER), Rensselaer Polytechnic Institute, Troy, NY, in December 1992. His Ph.D. dissertation was the study of the effects of space and nuclear radiation on circuits and electronics.
After his postdoctoral work with NEER, he was a National Research Council Fellow with the Air Force Research Laboratory, Kirtland AFB, Albuquerque, NM. In July 1997, he was with the Electrical and Computer Engineering Department, University of New Mexico, as a Research Associate Professor. Since 2003, he has been on the faculty of the Department of Electrical and Computer Engineering, University of Missouri—Columbia, Columbia, as an Associate Professor. He has a number of research papers to his credit and has also contributed articles to the book UltraWideband Short-Pulse Electromagnetics (Kluwer, 2007). His research interests are in the physics and technology of energetic charged particle's interactions with semiconductor devices, dose rate and total dose effects, study of photonic devices used in the generation of high-power microwaves, and semiconductor-device-simulation studies.View more
Author image of Phumin Kirawanich
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Columbia, MO, USA
Phumin Kirawanich (S'02–M'04) received the M.S. and Ph.D. degrees in electrical engineering from the University of Missouri—Columbia, Columbia, in 1999 and 2002, respectively.
From 2002 to 2003, he was with the Power Electronics Research Center, University of Missouri—Columbia. Since 2003, he has been with the High Power Electromagnetic Radiation Laboratory, Department of Electrical and Computer Engineering, University of Missouri—Columbia, as a Postdoctoral Fellow. He has also contributed articles to the book UltraWideband Short-Pulse Electromagnetics (Kluwer, 2007). His research interests include RF effects on sensitive electronic systems, electromagnetic-topology techniques and modeling, semiconductor devices, and power-system-harmonic analysis and compensation.
Phumin Kirawanich (S'02–M'04) received the M.S. and Ph.D. degrees in electrical engineering from the University of Missouri—Columbia, Columbia, in 1999 and 2002, respectively.
From 2002 to 2003, he was with the Power Electronics Research Center, University of Missouri—Columbia. Since 2003, he has been with the High Power Electromagnetic Radiation Laboratory, Department of Electrical and Computer Engineering, University of Missouri—Columbia, as a Postdoctoral Fellow. He has also contributed articles to the book UltraWideband Short-Pulse Electromagnetics (Kluwer, 2007). His research interests include RF effects on sensitive electronic systems, electromagnetic-topology techniques and modeling, semiconductor devices, and power-system-harmonic analysis and compensation.View more
Author image of Christopher M. Fessler
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Columbia, MO, USA
Christopher M. Fessler received the B.S. degree in electrical engineering from the University of Missouri—Columbia, Columbia, in 2005, where he is currently working toward the M.S. degree.
His research interests include pulsed-power, high power fiber optics, and silicon carbide photoconductive semiconductor switches.
Christopher M. Fessler received the B.S. degree in electrical engineering from the University of Missouri—Columbia, Columbia, in 2005, where he is currently working toward the M.S. degree.
His research interests include pulsed-power, high power fiber optics, and silicon carbide photoconductive semiconductor switches.View more
Author image of William C. Nunnally
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Columbia, MO, USA
William C. Nunnally (S'67–M'69–SM'07) received the B.S., M.S., and Ph.D. degrees in electrical engineering from the Texas Tech University, Lubbock, in 1969, 1971, and 1974, respectively.
After serving in the US Army, he was with the Magnetic Fusion Engineering Group, Los Alamos National Laboratory, Los Alamos, NM, in 1974. His 11-year tenure with Los Alamos included assignments in the Laser-Fusion Group, the Laser-Isotope-Separation Group, the Proton-Storage Ring-Accelerator Group, and the Advanced Electronics Research Group. In 1985, he was with the Electrical Engineering Department, University of Texas, Arlington, where he was the Director of the Applied Physical Research Center. During his 11-year tenure with the University of Texas as a Principal Investigator, he was responsible for external research funding of over 11 million or approximately 1 million per year. He then moved to the University of Missouri—Columbia, Columbia, where he is currently the C.W. LaPierre Professor of electrical engineering with the Department of Electrical and Computer Engineering. He is the Author of over 100 scientific papers and portions of five books related to pulse-power systems, plasma physics diagnostics, high-speed impulse and microwave-burst generators, magnetic switching, pulse compression, optically controlled semiconductor switching, and physical electronics. He is the Inventor or Coinventor of eight U.S. patents in the areas of electromagnetic launchers, flat-panel displays, printers, aircraft deicing, electrooptical storage, and electric-vehicle batteries.
Dr. Nunnally serves on two IEEE conference committees and reviews papers for a number of journals. He has presented short courses related to the application of physical electronics at several IEEE conferences and for several federal agencies in a number of areas. He also serves as an International Consultant and Lecturer.
William C. Nunnally (S'67–M'69–SM'07) received the B.S., M.S., and Ph.D. degrees in electrical engineering from the Texas Tech University, Lubbock, in 1969, 1971, and 1974, respectively.
After serving in the US Army, he was with the Magnetic Fusion Engineering Group, Los Alamos National Laboratory, Los Alamos, NM, in 1974. His 11-year tenure with Los Alamos included assignments in the Laser-Fusion Group, the Laser-Isotope-Separation Group, the Proton-Storage Ring-Accelerator Group, and the Advanced Electronics Research Group. In 1985, he was with the Electrical Engineering Department, University of Texas, Arlington, where he was the Director of the Applied Physical Research Center. During his 11-year tenure with the University of Texas as a Principal Investigator, he was responsible for external research funding of over 11 million or approximately 1 million per year. He then moved to the University of Missouri—Columbia, Columbia, where he is currently the C.W. LaPierre Professor of electrical engineering with the Department of Electrical and Computer Engineering. He is the Author of over 100 scientific papers and portions of five books related to pulse-power systems, plasma physics diagnostics, high-speed impulse and microwave-burst generators, magnetic switching, pulse compression, optically controlled semiconductor switching, and physical electronics. He is the Inventor or Coinventor of eight U.S. patents in the areas of electromagnetic launchers, flat-panel displays, printers, aircraft deicing, electrooptical storage, and electric-vehicle batteries.
Dr. Nunnally serves on two IEEE conference committees and reviews papers for a number of journals. He has presented short courses related to the application of physical electronics at several IEEE conferences and for several federal agencies in a number of areas. He also serves as an International Consultant and Lecturer.View more

References

References is not available for this document.