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C. M. Fessler

Also published under: Christopher M. Fessler, Chris Fessler

Publications
8
Citations
47
Publications by Year
20052008
Co-Authors:
Show All Co-Authors (7)
Image of author C. M. Fessler

C. M. Fessler

Also published under: Christopher M. Fessler, Chris Fessler

Affiliation

Department of Electrical and Computer Engineering
University of Missouri
Columbia, Columbia, MO, USA

Publication Topics

Biography

Christopher M. Fessler received the B.S. degree in electrical engineering from the University of Missouri—Columbia, Columbia, in 2005, where he is currently working toward the M.S. degree.,His research interests include pulsed-power, high power fiber optics, and silicon carbide photoconductive semiconductor switches.(Based on document published on 8 February 2008).
Publications
8
Citations
47
Publications by Year
20052008
Co-Authors:
Show All Co-Authors (7)
Author's Published Works

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JFET/SOS devices: processing and gamma radiation effects

Nie Jiping;Liu Zhongli;He Zhijing;Yu Fang;Li Guohua

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)
Year: 1998 | Conference Paper |
A process for fabricating n-channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p/sup +/-n junction was obtained by diffusion, and the conductive channel formed by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co/sub 60/ /spl gamma/-ray irra...Show More

JFET/SOS devices: processing and gamma radiation effects

Nie Jiping;Liu Zhongli;He Zhijing;Yu Fang;Li Guohua

Year: 1998 | Conference Paper |

Improvement of CMOS/SOS devices characteristics by a modified solid phase epitaxy

Liu Zhongli;He Zhijing;Yu Fang;Nie Jiping;Yu Yuanhuan

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)
Year: 1998 | Conference Paper |
CMOS/SOS devices have lower carrier mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly result from the defects in the heteroepitaxial silicon film, especially from the defects near the Si-sapphire interface. This paper describes an experimental study of the improvement in CMOS/SOS devices characteristics resulting from improved epitaxial silicon quality which ...Show More

Improvement of CMOS/SOS devices characteristics by a modified solid phase epitaxy

Liu Zhongli;He Zhijing;Yu Fang;Nie Jiping;Yu Yuanhuan

Year: 1998 | Conference Paper |

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