Abstract:
A simulation program that models the gas immersion laser doping (GILD) process is described. This program, which is called LASERMELT, first solves for the silicon melt de...Show MoreMetadata
Abstract:
A simulation program that models the gas immersion laser doping (GILD) process is described. This program, which is called LASERMELT, first solves for the silicon melt depth and melt time versus laser energy fluence, and then the impurity dopant profiles using a dopant incorporation and impurity diffusion model. Experimental and simulated dopant profiles and sheet resistance values are given as functions of the laser energy fluence and number of pulses. The determination of liquid phase impurity diffusion coefficients in molten silicon is also described.<>
Published in: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ( Volume: 7, Issue: 2, February 1988)
DOI: 10.1109/43.3150
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Doping Process ,
- Laser Doping ,
- Gas Immersion Laser Doping ,
- Diffusion Coefficient ,
- Laser Pulse ,
- Peak Concentration ,
- Sheet Resistance ,
- Laser Energy ,
- Simulation Program ,
- Excimer Laser ,
- Silicon Surface ,
- Doping Profile ,
- Melting Time ,
- Determination Of Diffusion Coefficients ,
- Process Parameters ,
- Ionizing Radiation ,
- Study Materials ,
- Laser Melting ,
- Rutherford Backscattering Spectrometry ,
- Secondary Ion Mass Spectrometry ,
- Thick Wafer ,
- Si Surface ,
- Laser Parameters ,
- Attenuation Length ,
- Gas Pressure ,
- Crystal Growth ,
- Doped System
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Doping Process ,
- Laser Doping ,
- Gas Immersion Laser Doping ,
- Diffusion Coefficient ,
- Laser Pulse ,
- Peak Concentration ,
- Sheet Resistance ,
- Laser Energy ,
- Simulation Program ,
- Excimer Laser ,
- Silicon Surface ,
- Doping Profile ,
- Melting Time ,
- Determination Of Diffusion Coefficients ,
- Process Parameters ,
- Ionizing Radiation ,
- Study Materials ,
- Laser Melting ,
- Rutherford Backscattering Spectrometry ,
- Secondary Ion Mass Spectrometry ,
- Thick Wafer ,
- Si Surface ,
- Laser Parameters ,
- Attenuation Length ,
- Gas Pressure ,
- Crystal Growth ,
- Doped System
