Abstract:
A diffusion model for ion-implanted BF/sub 2//sup +/ ions in Si for rapid thermal annealing application has been developed based on the effects of defect evolution on dop...Show MoreMetadata
Abstract:
A diffusion model for ion-implanted BF/sub 2//sup +/ ions in Si for rapid thermal annealing application has been developed based on the effects of defect evolution on dopant diffusion. In addition, a simple, accurate and universal precipitation model has been developed for high dose implantation. Simulation results show excellent agreement with the experimental results.<>
Published in: 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers
Date of Conference: 12-14 May 1993
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-0978-2
Print ISSN: 1524-766X
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA
Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA
