Abstract:
A diffusion model for ion-implanted BF/sub 2//sup +/ ions in Si for rapid thermal annealing application has been developed based on the effects of defect evolution on dop...Show MoreMetadata
Abstract:
A diffusion model for ion-implanted BF/sub 2//sup +/ ions in Si for rapid thermal annealing application has been developed based on the effects of defect evolution on dopant diffusion. In addition, a simple, accurate and universal precipitation model has been developed for high dose implantation. Simulation results show excellent agreement with the experimental results.<>
Published in: 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers
Date of Conference: 12-14 May 1993
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-0978-2
Print ISSN: 1524-766X
