2.4 mu m intersubband absorption in In/sub 1-x/Ga/sub x/As/AlAs/sub 1-y/Sb/sub y/ multiple quantum wells | IEEE Conference Publication | IEEE Xplore
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2.4 mu m intersubband absorption in In/sub 1-x/Ga/sub x/As/AlAs/sub 1-y/Sb/sub y/ multiple quantum wells

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H. Asai; Y. Kawamura
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Abstract:

In/sub 1-x/Ga/sub x/As/AlAs/sub 1-y/Sb/sub y/ multiple quantum wells (MQWs) lattice-matched to

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Abstract:

In/sub 1-x/Ga/sub x/As/AlAs/sub 1-y/Sb/sub y/ multiple quantum wells (MQWs) lattice-matched to
Published in: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels
Date of Conference: 21-24 April 1992
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-0522-1
DOI: 10.1109/ICIPRM.1992.235556
Conference Location: Newport, RI, USA
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1.
T. Hirono, H. Kobayashi, H. Asai, K. Yokoyama, "All-optical waveguide-type gain switch utilizing intersubband transition", IEEE Journal of Selected Topics in Quantum Electronics, vol.2, no.2, pp.410-417, 1996.
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2.
N. Susa, "Design of double and triple quantum wells for InGaAs-AlAsSb intersubband unipolar semiconductor lasers", IEEE Journal of Quantum Electronics, vol.32, no.1, pp.20-28, 1996.
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