Abstract:
The quantized Hall resistances, R/sub H/(4), of Si MOSFETs were measured at approximately=0.5 K in a magnetic field of 15 T. The value of R/sub H/(4) was determined in te...Show MoreMetadata
Abstract:
The quantized Hall resistances, R/sub H/(4), of Si MOSFETs were measured at approximately=0.5 K in a magnetic field of 15 T. The value of R/sub H/(4) was determined in terms of the Commonwealth Scientific and Industrial Research Organization (CSIRO) realization of the SI ohm. A weighted mean of three determinations gave a value for the quantity R/sub H/(4) of (6453.203,36(52)) Omega /sub SI-NML/ which can also be expressed as 6453.2(1.000,000,52(8)) Omega /sub SI-NML/. This R/sub H/(4) value gives a value for h/e/sup 2/ which is about 0.3 p.p.m. larger than the value for h/e/sup 2/ derived from the anomalous moment of the electron, using the quantum electrodynamics (QED) theory.<>
Published in: IEEE Transactions on Instrumentation and Measurement ( Volume: 38, Issue: 2, April 1989)
DOI: 10.1109/19.192286
References is not available for this document.
Select All
1.
K. V. Klitzing, G. Dorda and M. Pepper, "New method for high accuracy determination of the fine-structure constant based on quantized Hall resistance", Phys. Rev. Lett., vol. 45, pp. 494-496, 1980.
2.
B. N. Taylor, "History of the present value of 2e/h commonly used for defining national units of voltage and possible changes in national units of voltage and resistance", IEEE Trans. Instrum. Meas., vol. IM-36, pp. 659-664, June 1987.
3.
A. Hartland, R. G. Jones, B. P. Kibble and D. J. Legg, "The relationship between the SI ohm the ohm at NPL and the quantized Hall resistance", IEEE Trans. Instrum. Meas., vol. IM-36, pp. 208-313, 1987.
4.
B. W. Ricketts and M. E. Cage, "Quantized Hall resistance measurement at the NML", IEEE Trans. Instrum. Meas., vol. IM-36, pp. 245-248, 1987.
5.
T. Kinoshita, "The anomalous magnetic moment of the electron and the quantum electrodynamic determination of the fine-structure constant", IEEE Trans. Instrum. Meas., vol. IM-36, pp. 201-264, 1987.
6.
K. Yoshihiro, "Quantum Hall effect in silicon metal-oxide-semiconductor inversion layers: Experimental conditions for determination of h/e2", Phys. Rev. B, vol. 33, pp. 6874-6896, 1986.
7.
G. W. Small, "Twenty years of SI ohm determinations at NML", IEEE Trans. Instrum. Meas., vol. IM-36, pp. 190-195, 1987.
8.
G. W. Small, "Comparison of quantized Hall resistance with a 1-Ω standard", IEEE Trans. Instrum. Meas., vol. IM-32, pp. 446-447, 1983.
9.
J. Kinoshita et al., "Self-balancing resistance ratio bridge using a cryogenic current comparator," pp. 290-292, this issue.
10.
T. J. Witt, T. Endo and D. Reyman, "The realization of the quantum Hall standard of resistance at BIPM", IEEE Trans. Instrum. Meas., vol. IM-36, pp. 234-239, 1987.
11.
Progress report on investigations of the quantum Hall effect as a possible resistance standard, 1983.
12.
K. Shida, T. Wada, H. Nishina and T. Igarashi, "Direct comparison of quantized Hall resistance between Si-MOSFET and GaAs/AlGaAs heterostructure devices on the same sample holder", Jap. J. Appl. Phys., vol. 25, pp. L63-L65, 1986.
13.
W. Schwitz, L. Bauder, H. J. Bühlmann, M. A. Py and J. Ilegems, "The quantum Hall effect as a standard to define the laboratory unit of resistance", IEEE Trans. Instrum. Meas., vol. IM-36, pp. 240-244, 1987.
14.
F. Delayahe, Private communication.
15.
A. D. Stone, "Universal conductance fluctuations and quantum interference effects in mesoscopic and macroscopic systems", Proc. 2nd Int. Symp. Foundations Quantum Mechanics, pp. 207-217, 1986.
16.
J. Kinoshita, "Abrupt dissapearance of the quantum Hall effect observed in a silicon n-inversion layers", Proc. 2nd Int. Symp. Foundations Quantum Mechanics, pp. 150-154, 1986.