Abstract:
The quantized Hall resistances, R/sub H/(4), of Si MOSFETs were measured at approximately=0.5 K in a magnetic field of 15 T. The value of R/sub H/(4) was determined in te...Show MoreMetadata
Abstract:
The quantized Hall resistances, R/sub H/(4), of Si MOSFETs were measured at approximately=0.5 K in a magnetic field of 15 T. The value of R/sub H/(4) was determined in terms of the Commonwealth Scientific and Industrial Research Organization (CSIRO) realization of the SI ohm. A weighted mean of three determinations gave a value for the quantity R/sub H/(4) of (6453.203,36(52)) Omega /sub SI-NML/ which can also be expressed as 6453.2(1.000,000,52(8)) Omega /sub SI-NML/. This R/sub H/(4) value gives a value for h/e/sup 2/ which is about 0.3 p.p.m. larger than the value for h/e/sup 2/ derived from the anomalous moment of the electron, using the quantum electrodynamics (QED) theory.<>
Published in: IEEE Transactions on Instrumentation and Measurement ( Volume: 38, Issue: 2, April 1989)
DOI: 10.1109/19.192286
Department of Physics, Gakushuin University, Tokyo, Japan
Department of Physics, Gakushuin University, Tokyo, Japan
Department of Physics, Gakushuin University, Tokyo, Japan
Department of Physics, Gakushuin University, Tokyo, Japan
Division of Applied Physics, National Measurement Laboratory, CSIRO, Sydney, Australia
Device Fundamentals Section, Electro Technical Laboratory, Tsukuba, Ibaraki, Japan
Device Fundamentals Section, Electro Technical Laboratory, Tsukuba, Ibaraki, Japan
Device Fundamentals Section, Electro Technical Laboratory, Tsukuba, Ibaraki, Japan
Device Fundamentals Section, Electro Technical Laboratory, Tsukuba, Ibaraki, Japan
Department of Physics, Gakushuin University, Tokyo, Japan
Department of Physics, Gakushuin University, Tokyo, Japan
Department of Physics, Gakushuin University, Tokyo, Japan
Department of Physics, Gakushuin University, Tokyo, Japan
Division of Applied Physics, National Measurement Laboratory, CSIRO, Sydney, Australia
Device Fundamentals Section, Electro Technical Laboratory, Tsukuba, Ibaraki, Japan
Device Fundamentals Section, Electro Technical Laboratory, Tsukuba, Ibaraki, Japan
Device Fundamentals Section, Electro Technical Laboratory, Tsukuba, Ibaraki, Japan
Device Fundamentals Section, Electro Technical Laboratory, Tsukuba, Ibaraki, Japan
