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An Improved Model for Electron Mobility Degradation by Remote Coulomb Scattering in Ultra-Thin Oxide MOSFETs | IEEE Conference Publication | IEEE Xplore
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An Improved Model for Electron Mobility Degradation by Remote Coulomb Scattering in Ultra-Thin Oxide MOSFETs

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D. Esseni; A. Abramo
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Published in: 32nd European Solid-State Device Research Conference
Date of Conference: 24-26 September 2002
Date Added to IEEE Xplore: 17 October 2005
Print ISBN:88-900847-8-2
DOI: 10.1109/ESSDERC.2002.194900
Conference Location: Firenze, Italy

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