Abstract:
Conditions to achieve shallow p+-junctions with low sheet resistance by using ion implantation and rapid thermal annealing (RTA), are presented. This work shows that (jun...Show MoreMetadata
Abstract:
Conditions to achieve shallow p+-junctions with low sheet resistance by using ion implantation and rapid thermal annealing (RTA), are presented. This work shows that (junction depth) × (sheet resistivity)\rho_{s}X_{j}has a smaller value with increasing implant dose and anneal temperature (boron solubility), and decreasing implant energy. However, the value is saturated for higher doses than 1016Xjcm2, where Xjis junction depth in micrometers, and anneal temperature should be lower than 1100°C, because of considerable boron diffusion even in 10-s RTA.\rho_{s}X_{j} = 18Ω.µm is achieved by BF2+ implantation with 5 × 1015-cm-2dose at 30 keV and 1000°C RTA. The possibility of further improvement in\rho_{s}X_{j}value is discussed.
Published in: IEEE Electron Device Letters ( Volume: 7, Issue: 3, March 1986)
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