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Journals & Magazines >IEEE Electron Device Letters >Volume: 5 Issue: 8

Shallow boron junctions implanted in silicon through a surface oxide

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T.M. Liu; W.G. Oldham
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Abstract:

The partial-ion-channeling tail in the atomic distribution profile of low-energy boron implants into

Metadata

Abstract:

The partial-ion-channeling tail in the atomic distribution profile of low-energy boron implants into
Published in: IEEE Electron Device Letters ( Volume: 5, Issue: 8, August 1984)
Page(s): 299 - 301
Date of Publication: 09 August 2005

ISSN Information:

DOI: 10.1109/EDL.1984.25924
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