Shallow boron junctions implanted in silicon through a surface oxide | IEEE Journals & Magazine | IEEE Xplore

Shallow boron junctions implanted in silicon through a surface oxide


Abstract:

The partial-ion-channeling tail in the atomic distribution profile of low-energy boron implants into

Abstract:

The partial-ion-channeling tail in the atomic distribution profile of low-energy boron implants into
Published in: IEEE Electron Device Letters ( Volume: 5, Issue: 8, August 1984)
Page(s): 299 - 301
Date of Publication: 09 August 2005

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