Shallow boron junctions implanted in silicon through a surface oxide

Abstract:

The partial-ion-channeling tail in the atomic distribution profile of low-energy boron implants into

The partial-ion-channeling tail in the atomic distribution profile of low-energy boron implants into

Published in: IEEE Electron Device Letters ( Volume: 5, Issue: 8, August 1984)

Page(s): 299 - 301

Date of Publication: 09 August 2005

DOI: 10.1109/EDL.1984.25924

References is not available for this document.