Loading [MathJax]/extensions/MathMenu.js
A novel silicon Schottky diode for NLTL applications | IEEE Journals & Magazine | IEEE Xplore

A novel silicon Schottky diode for NLTL applications


Abstract:

The design and simulation of a novel silicon Schottky diode for nonlinear transmission line (NLTL) applications is discussed in this paper. The Schottky diode was fabrica...Show More

Abstract:

The design and simulation of a novel silicon Schottky diode for nonlinear transmission line (NLTL) applications is discussed in this paper. The Schottky diode was fabricated on a novel silicon-on-silicide-on-insulator (SSOI) substrate for minimized series resistance. Ion implantation technology was used as a low-cost alternative to molecular beam epitaxy to approximate the delta (/spl delta/) doping profile, which results in strong nonlinear CV characteristics. The equivalent circuit model of the Schottky diode under reverse bias conditions was extracted from the S-parameter measurement performed on the diode. The measured CV characteristics show strong nonlinearity, the junction capacitance varies from 182 to 47.5 fF as the reverse bias voltage is varied from 0 to -5 V. A parasitic inductance of 40 pH was measured for the silicon Schottky diode, which is much smaller than a comparable sized GaAs Schottky diode. This small inductance is an advantage for the silicon Schottky diode offering improvement in the silicon NLTL performance.
Published in: IEEE Transactions on Electron Devices ( Volume: 52, Issue: 7, July 2005)
Page(s): 1384 - 1391
Date of Publication: 27 June 2005

ISSN Information:


I. Introduction

The nonlinear transmission line (NLTL) has found a wide range of applications especially in the field of high speed sampling and measurement circuitry [1], [2]. The generation of very sharp rise time shock wave signals using a NLTL has been reported in the literature by several authors [3]–[5]. The performance of the NLTL depends entirely on the Schottky diode characteristics which are defined by the silicon doping profile. The nonlinear CV characteristic of the Schottky diode, the key element for the NLTL design, provides nonlinear wave propagation which gives very high rise time compression. The series resistance of the Schottky diode attenuates the input signal and increases the insertion loss of the NLTL. Shock waves with sub-picosecond rise time pulses on GaAs NLTL are reported in [6] used a delta-doped () Schottky diode which has strong nonlinear CV characteristics and low series resistance under reverse bias conditions. The doping profile is achieved using the molecular beam epitaxy (MBE) technique to grow a thin highly conductive layer within the n active layer of the Schottky diode. Usually GaAs Schottky diodes are used in the NLTL design because they inherently have low series resistance, high cut-off frequency, and high carrier mobility when compared to silicon Schottky diodes.

References

References is not available for this document.