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F. H. Ruddell - IEEE Xplore Author Profile

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Monolithic active pixel detectors fabricated in SOI (silicon on insulator) technology are novel sensors of ionizing radiation which exploit SOI substrates for the integration of readout electronics with a pixel detector. The fully-depleted sensing diode is manufactured under the SOI buried oxide (BOX) in the volume of the `handle wafer', while readout circuitry occupies the upper silicon SOI `devi...Show More
Monolithic active pixel detectors fabricated in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. The fully depleted sensing diode has been manufactured under buried oxide (BOX) while read-out circuitry occupies upper silicon layer (‘device layer’). The development of the SOI ...Show More
Monolithic active pixel detectors in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. Some important parameters of the devices are breakdown voltage and leakage current. The paper addresses recent developments in the field of the technology of the SOI detectors, which lead to...Show More
SOI substrates are important for the fabrication of monolithic active pixel high energy physics particle detectors. In this work, self-aligned circular geometry MOS transistor test structures were fabricated on ion split, bonded SOI substrates to evaluate the interface between the high resistivity handle silicon and the SOI buried oxide. Pre- and post- proton irradiation transistor measurements ar...Show More
The design and simulation of a novel silicon Schottky diode for nonlinear transmission line (NLTL) applications is discussed in this paper. The Schottky diode was fabricated on a novel silicon-on-silicide-on-insulator (SSOI) substrate for minimized series resistance. Ion implantation technology was used as a low-cost alternative to molecular beam epitaxy to approximate the delta (/spl delta/) dopi...Show More
This paper describes the deposition of microcrystalline silicon carbide in an LRP reactor using silane/propane gas chemistry and discusses the performance of heterojunction bipolar transistors using N-SiC emitters.Show More
An optimum TiSi2 thickness of 55nM has been established for contacting 110nM P+ layers. The P+ layer sheet resistance is reduced to less than 3 ohms per square without compromising the reverse leakage currents of the junctions. The reduction in Gummel number for the P+ layer has reduced the emitter efficiency of the junctions and yielded a factor of four increase in latch-up resistance.Show More